SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ15015
DESCRIPTION
·With TO-3 package
·Complement to type MJ15016
·Excellent safe operating area
APPLICATIONS
·For high power audio ,stepping
motor and other linear applications
·Relay or solenoid drviers
·DC-DC converters inverters
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
200
120
7
15
7
180
150
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
t
h j-c
PARAMETER
Thermal resistance junction to case
MAX
0.98
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Second breakdown collector current
With base forward biased
Output capacitance
Transition frequency
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=4A; I
B
=0.4A
I
C
=10A; I
B
=3.3A
I
C
=15A; I
B
=7.0A
I
C
=4A ; V
CE
=4V
V
CE
=60V; V
BE(
off
)
=0
V
CE
=Rated Value; V
BE(
off
)
=1.5V
T
C
=150
V
EB
=7V; I
C
=0
I
C
=4A ; V
CE
=2V
I
C
=4A ; V
CE
=4V
I
C
=10A ; V
CE
=4V
V
CE
=60Vdc,t=0.5 s,
Nonrepetitive
I
E
=0 ; V
CB
=10V;f=1.0MHz
I
C
=1A ; V
CE
=4V;f=1.0MHz
10
20
5
3.0
60
0.8
MIN
120
SYMBOL
V
CEO(SUS)
V
CE
(sat)
-1
V
CE
(sat)
-2
V
CE
(sat)
-3
V
BE
I
CEO
I
CEV
I
EBO
h
FE-1
h
FE-2
h
FE-3
I
s/b
C
OB
f
T
MJ15015
TYP.
MAX
UNIT
V
1.1
3.0
5.0
1.8
0.1
1.0
6.0
0.2
70
70
V
V
V
V
mA
mA
mA
A
600
pF
MHz
2
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