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Datasheet> 器件分类 > 存储> 存储> 5962-9305605MYA

5962-9305605MYA: 产品描述Non-Volatile SRAM, 8KX8, 45ns, CMOS, CQCC28, CERAMIC, LCC-28; 产品类别存储存储; 文件大小230KB，共12页; 制造商Simtek; 官网地址http://www.simtek.com

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5962-9305605MYA概述

Non-Volatile SRAM, 8KX8, 45ns, CMOS, CQCC28, CERAMIC, LCC-28

5962-9305605MYA规格参数

参数名称	属性值
是否Rohs认证	不符合
包装说明	QCCN, LCC28,.35X.55
Reach Compliance Code	unknown
ECCN代码	3A001.A.2.C
最长访问时间	45 ns
其他特性	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL
JESD-30 代码	R-CQCC-N28
JESD-609代码	e0
长度	13.97 mm
内存密度	65536 bit
内存集成电路类型	NON-VOLATILE SRAM
内存宽度	8
功能数量	1
端口数量	1
端子数量	28
字数	8192 words
字数代码	8000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	8KX8
输出特性	3-STATE
可输出	YES
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	QCCN
封装等效代码	LCC28,.35X.55
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
并行/串行	PARALLEL
峰值回流温度（摄氏度）	240
电源	5 V
认证状态	Not Qualified
筛选级别	MIL-STD-883
座面最大高度	2.29 mm
最大待机电流	0.002 A
最大压摆率	0.075 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子面层	Tin/Lead (Sn85Pb15)
端子形式	NO LEAD
端子节距	1.27 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	8.89 mm
Base Number Matches	1

5962-9305605MYA相似产品对比

	5962-9305605MYA	5962-9305606MYA	5962-9305604MYA	5962-9305604MXC	STK10C68-C45I	STK10C68-P45I	STK10C68-5L35M	5962-9305605MXC
描述	Non-Volatile SRAM, 8KX8, 45ns, CMOS, CQCC28, CERAMIC, LCC-28	Non-Volatile SRAM, 8KX8, 35ns, CMOS, CQCC28, CERAMIC, LCC-28	Non-Volatile SRAM, 8KX8, 55ns, CMOS, CQCC28, CERAMIC, LCC-28	Non-Volatile SRAM, 8KX8, 55ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28	Non-Volatile SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28	Non-Volatile SRAM, 8KX8, 45ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28	Non-Volatile SRAM, 8KX8, 35ns, CMOS, CQCC28, CERAMIC, LCC-28	Non-Volatile SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
包装说明	QCCN, LCC28,.35X.55	QCCN, LCC28,.35X.55	QCCN, LCC28,.35X.55	DIP, DIP28,.3	DIP, DIP28,.3	DIP, DIP28,.3	QCCN, LCC28,.35X.55	DIP, DIP28,.3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	EAR99	EAR99	3A001.A.2.C	3A001.A.2.C
最长访问时间	45 ns	35 ns	55 ns	55 ns	45 ns	45 ns	35 ns	45 ns
其他特性	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL	HARDWARE STORE/RECALL; AUTOMATIC STORE TIMING	HARDWARE STORE/RECALL; AUTOMATIC STORE TIMING	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL
JESD-30 代码	R-CQCC-N28	R-CQCC-N28	R-CQCC-N28	R-CDIP-T28	R-CDIP-T28	R-PDIP-T28	R-CQCC-N28	R-CDIP-T28
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0
长度	13.97 mm	13.97 mm	13.97 mm	35.56 mm	35.56 mm	34.67 mm	13.97 mm	35.56 mm
内存密度	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
内存集成电路类型	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM
内存宽度	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1
端子数量	28	28	28	28	28	28	28	28
字数	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words
字数代码	8000	8000	8000	8000	8000	8000	8000	8000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	125 °C	125 °C	125 °C	85 °C	85 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-40 °C	-40 °C	-55 °C	-55 °C
组织	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
可输出	YES	YES	YES	YES	YES	YES	YES	YES
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装代码	QCCN	QCCN	QCCN	DIP	DIP	DIP	QCCN	DIP
封装等效代码	LCC28,.35X.55	LCC28,.35X.55	LCC28,.35X.55	DIP28,.3	DIP28,.3	DIP28,.3	LCC28,.35X.55	DIP28,.3
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	IN-LINE	IN-LINE	IN-LINE	CHIP CARRIER	IN-LINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	240	240	240	240	240	240	240	240
电源	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	2.29 mm	2.29 mm	2.29 mm	4.14 mm	4.14 mm	4.57 mm	2.29 mm	4.14 mm
最大待机电流	0.002 A	0.002 A	0.002 A	0.002 A	0.00075 A	0.00075 A	0.002 A	0.002 A
最大压摆率	0.075 mA	0.08 mA	0.07 mA	0.07 mA	0.065 mA	0.065 mA	0.08 mA	0.075 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	NO	NO	NO	YES	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	INDUSTRIAL	INDUSTRIAL	MILITARY	MILITARY
端子面层	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)
端子形式	NO LEAD	NO LEAD	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	THROUGH-HOLE
端子节距	1.27 mm	1.27 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm	1.27 mm	2.54 mm
端子位置	QUAD	QUAD	QUAD	DUAL	DUAL	DUAL	QUAD	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	8.89 mm	8.89 mm	8.89 mm	7.62 mm	7.62 mm	7.62 mm	8.89 mm	7.62 mm
筛选级别	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-STD-883	-	-	38535Q/M;38534H;883B	MIL-STD-883
Base Number Matches	1	1	1	1	1	1	1	-

5962-9305605MYA

5962-9305605MYA概述

5962-9305605MYA规格参数

5962-9305605MYA相似产品对比

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