VS-ST333C..L Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 620 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case TO-200AC (B-PUK)
• High surge current capability
• Low thermal impedance
TO-200AC (B-PUK)
• High speed performance
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
C/hs
TO-200AC (B-PUK)
Single SCR
620 A
400 V to 800 V
1.96 V
11 000 A
11 500 A
200 mA
55 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Range
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
620
55
1230
25
11 000
11 500
605
553
400 to 800
10 to 30
-40 to +125
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
VOLTAGE
V
500
900
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
50
VS-ST333C..L
Revision: 02-Mar-17
Document Number: 96078
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST333C..L Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
R
Voltage before turn-on V
D
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
1430
1670
1080
530
50
V
DRM
50
40
1250
1170
880
400
2340
2310
2090
1190
50
V
DRM
-
1940
1940
1800
990
6310
3440
2040
990
50
V
DRM
-
5620
5030
1750
800
V
A/μs
55
°C
/μF
A
55
10 / 0.47
40
10 / 0.47
55
40
10 / 0.47
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state
current at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
620 (305)
55 (75)
1230
11 000
11 500
9250
Sinusoidal half wave,
initial T
J
= T
J
max.
9700
605
553
428
391
6050
1.96
0.91
0.93
0.58
0.58
600
1000
m
V
kA
2
s
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
I
TM
= 1810 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
(I >
x I
T(AV)
), T
J
= T
J
max.
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
,
I
G
= 1 A
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Maximum turn-off time
minimum
maximum
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
T
J
= T
J
max., V
DRM
= rated V
DRM
, I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5
source
T
J
= T
J
max., I
TM
= 550 A, commutating dI/dt = 40 A/μs,
V
R
= 50 V, t
p
= 500 μs, dV/dt: see table in device code
VALUES
1000
1.1
10
30
μs
UNITS
A/μs
Revision: 02-Mar-17
Document Number: 96078
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST333C..L Series
www.vishay.com
Vishay Semiconductors
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
max., linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
max., rated V
DRM
/V
RRM
applied
VALUES
500
50
UNITS
V/μs
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
T
J
= T
J
max., rated V
DRM
applied
T
J
= T
J
max., t
p
5 ms
TEST CONDITIONS
T
J
= T
J
max., f = 50 Hz, d % = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
SYMBOL
T
J
T
Stg
R
thJ-hs
R
thC-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.11
0.05
0.011
0.005
9800
(1000)
250
See dimensions - link at the end of datasheet
N
(kg)
g
K/W
UNITS
°C
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
TO-200AC (B-PUK)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.012
0.014
0.018
0.026
0.045
DOUBLE SIDE
0.010
0.015
0.018
0.027
0.046
RECTANGULAR CONDUCTION
SINGLE SIDE
0.008
0.014
0.019
0.027
0.046
DOUBLE SIDE
0.008
0.014
0.019
0.028
0.046
T
J
= T
J
max.
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 02-Mar-17
Document Number: 96078
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST333C..L Series
www.vishay.com
Vishay Semiconductors
130
ST333C..L series
(double
side
cooled)
R
thJ-hs
(DC) = 0.05 K/W
130
Maximum Allowable Heatsink
Temperature (°C)
120
110
100
90
80
70
60
50
40
30
0
100
200
Maximum Allowable Heatsink
Temperature (°C)
ST333C..L series
(single
side
cooled)
R
thJ-hs
(DC) = 0.11 K/W
120
110
100
90
80
70
60
50
40
30
20
0
200
400
600
Ø
Ø
Conduction angle
30°
60°
Conduction period
30°
60°
90°
120°
180°
DC
800
1000
1200
1400
90°
120°
180°
300
400
500
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 4 - Current Ratings Characteristics
130
Maximum Average On-State Power Loss (W)
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
200
400
600
800
1000
Ø
Maximum Allowable Heatsink
Temperature (°C)
120
110
100
90
80
70
60
50
40
30
0
100
200
300
ST333C..L series
(single
side
cooled)
R
thJ-hs
(DC) = 0.11 K/W
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction period
Conduction angle
ST333C..L series
T
J
= 125 °C
90°
120°
60°
30°
400
180°
500
DC
600
700
800
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 5 - On-State Power Loss Characteristics
130
Maximum Average On-State Power Loss (W)
Maximum Allowable Heatsink
Temperature (°C)
120
110
100
90
80
70
60
50
40
30
20
0
100
200
300
ST333C..L series
(double
side
cooled)
R
thJ-hs
(DC) = 0.05 K/W
2800
2400
2000
1600
1200
800
400
0
0
200
400
600
800
1000 1200 1400 1600
Ø
Ø
DC
180°
120°
90°
60°
30°
RMS limit
Conduction angle
30°
60°
90°
120°
180°
Conduction period
ST333C..L series
T
J
= 125 °C
400
500
600
700
800
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 02-Mar-17
Document Number: 96078
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST333C..L Series
www.vishay.com
Vishay Semiconductors
Z
thJ-hs
- Transient Thermal Impedance (K/W)
1
Staedy state
value R
th-J-hs
= 0.11 K/W
(single
side
cooled)
R
th-J-hs
= 0.05 K/W
(double
sided
cooled) (DC operation)
0.1
Peak Half
Sine
Wave On-State Current (A)
10 000
9500
9000
8500
8000
7500
7000
6500
6000
5500
5000
4500
1
At any rated load condition and with
rated V
RRM
applied following
surge.
Initial T
J
= 125 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
0.01
ST333C..L series
10
100
0.001
0.001
ST333C..L series
0.01
0.1
1
10
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Square
Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Peak Half
Sine
Wave On-State Current (A)
Q
rr -
Maximum Reverse Recovery
Charge (μC)
12 000
11 000
10 000
9000
8000
7000
6000
5000
4000
0.01
Maximum non-repetitive
surge
current
vs. pulse train duration. Control of
conduction may not be maintained.
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
320
300
280
260
240
220
200
180
160
140
120
100
80
10
20
30
40
50
60
I
TM
= 1000 A
500 A
300 A
200 A
100 A
ST333C..L series
0.1
1
ST333C..L series
T = 125 °C
70
80
90
100
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
dI
F
/dt - Rate of Fall of On-State Current (A/μs)
Fig. 11 - Reverse Recovered Charge Characteristics
Instantaneous On-State Current (A)
10 000
I
rr -
Maximum Reverse Recovery Current (A)
180
160
140
120
100
80
60
40
20
10
20
30
40
50
60
70
80
90
100
ST333C..L series
T = 125 °C
I
TM
= 1000 A
500 A
300 A
200 A
100 A
1000
T
J
= 25 °C
T
J
= 125 °C
ST333C..L series
100
0
1
2
3
4
5
6
7
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
dI
F
/dt - Rate of Fall of Forward Current (A/μs)
Fig. 12 - Reverse Recovery Current Characteristics
Revision: 02-Mar-17
Document Number: 96078
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
