Absolute Maximum Ratings
Symbol
V
DS
V
DGR
I
D
I
DM
V
GS
P
D
T
j
, T
stg
V
isol
humidity
climate
Conditions
1)
Values
800
800
34
136
±
20
700
– 55 . . .+150
2 500
Class F
55/150/56
34
136
min.
800
2,1
–
–
–
–
15
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
4
35
2,5
22
–
–
typ.
–
3,0
20
300
10
250
35
–
22
1
0,48
–
60
30
350
70
1,6
300
–
–
–
–
–
–
–
–
–
–
–
D 15
max.
–
4,0
250
1000
100
320
–
160
30
1,5
0,8
20
–
–
–
–
2
–
–
2/16
16/40
0,18
0,05
5
44
3,5
24
5x9,81
150
Units
V
V
A
A
V
W
°C
V
SEMITRANS
®
M
Power MOSFET Modules
SKM 181 F
R
GS
= 20 kΩ
AC, 1 min
DIN 40 040
DIN IEC 68 T.1
Inverse Diode
I
F
= – I
D
I
FM
= – I
DM
A
A
SEMITRANS M1
Units
V
V
µA
µA
nA
mΩ
S
pF
nF
nF
nF
nH
ns
ns
ns
ns
V
ns
ns
µC
A
°C/W
°C/W
Nm
lb.in.
Nm
lb.in.
m/s
2
g
Characteristics
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
CHC
C
iss
C
oss
C
rss
L
DS
t
d(on)
t
r
t
d(off)
t
f
Conditions
1)
V
GS
= 0, I
D
= 0,25 mA
V
GS
= V
DS
, I
D
= 1 mA
T
j
= 25
°C
V
GS
= 0,
½
V
DS
= 800 V
T
j
= 125
°C
V
GS
= 20 V, V
DS
= 0
V
GS
= 10 V, I
D
= 21 A
V
DS
= 25 V, I
D
= 21 A
Features
•
N Channel, enhancement mode
•
Fast inverse diode
•
Short internal connections
avoid oscillations
•
Switching kW’s in less than 1
µs
•
Isolated copper baseplate
•
All electrical connections on top
for easy busbaring
•
Large clearances and creepage
distances
•
UL recognized, file no. E 63 532
Typical Applications
•
•
•
•
•
•
•
•
•
•
Switched mode power supplies
DC servo and robot drives
DC choppers
Resonant and welding inverters
Induction heaters
AC motor drives
Laser power supplies
UPS equipment
Plasma cutting
Not suitable for linear
amplification
½
½
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 400 V
I
D
= 21 A
V
GS
= 10 V
R
GS
= 3,3
Ω
Inverse Diode
I
F
= 60 A, V
GS
= 0
V
SD
T
j
= 25
°C
2)
t
rr
T
j
= 150
°C
2)
T
j
= 25/150
°C
2)
Q
rr
I
RRM
T
j
= 25/150
°C
2)
Thermal Characteristics
R
thjc
M
1
, surface 10
µm
R
thch
Mechanical Data
M
1
M
2
a
w
Case
1)
2)
to heatsink, SI Units
to heatsink, US Units
for terminals, SI Units
for terminals, US Units
→
page B 5 – 2
T
case
= 25
°C,
unless otherwise specified
.
I
F
= – I
D,
V
R
= 100 V, – di
F
/dt = 100 A/µs
This is an electrostatic dischar-
ge sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
© by SEMIKRON
B 5 – 27
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