ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3
Data Sheet
January 2001
File Number
5019
600V, SMPS II LGC Series N-Channel IGBT
[ /Title
(ISL9
G1260
EG3,
ISL9G
1260E
P3,
ISL9G
1260E
S3)
/Subjec
t
(600V,
SMPS
II LGC
Series
N-
Chann
el
IGBT)
/Autho
r ()
/Keyw
ords
(Intersi
l
Corpor
ation,
semico
nducto
r,
600V,
SMPS
II LGC
Series
N-
Chann
el
IGBT,
The ISL9G1260EG3, ISL9G1260EP3 and ISL9G1260ES3
are Low Gate Charge (LGC) SMPS II IGBTs combining the
fast switching speed of the SMPS IGBTs with lower gate
charge and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high
voltage switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
•
•
•
•
•
•
Power Factor Correction (PFC) Circuits
Full Bridge Topologies
Half Bridge Topologies
Push-Pull Circuits
Uninterruptible Power Supplies
Zero Voltage and Zero Current Switching Circuits
Features
• >100kHz Operation at 390V,12A
• 200kHz Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . .72ns at T
J
= 125
o
C
• Low Gate Charge . . . . . . . . . . . . . . . . .23nC at V
GE
= 15V
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150mJ
• Low Conduction Loss
Symbol
C
G
Formerly Developmental Type TA49367.
Ordering Information
PART NUMBER
ISL9G1260EG3
ISL9G1260EP3
ISL9G1260ES3
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
G1260EG3
G1260EP3
G1260ES3
E
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g.,
ISL9G1260ES3T.
Packaging
JEDEC STYLE TO-247
E
C
G
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3 Rev. A
ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2
Single Pulse Avalanche Energy at T
C
= 25
o
C . . . . . . . .
Singlle Pulse Reverse Avalanche Energy at T
C
= 25
o
C
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . .
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . SSOA
. . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
. . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
. . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
600
50
20
108
±20
±30
60A at 600V
150mJ at 12A
100mJ at 12A
167
1.33
-55 to 150
300
260
UNITS
V
A
A
A
V
V
W
W/
o
C
o
C
o
C
o
C
.............................
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
T
J
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= 600V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
MIN
600
15
-
-
-
-
4.5
-
60
150
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
1.95
1.7
6.5
-
-
-
9.0
23
28
16
14
42
18
55
170
100
MAX
-
-
100
2
2.7
2.0
7.0
±250
-
-
-
30
36
-
-
-
-
-
-
-
UNITS
V
V
µA
mA
V
V
V
nA
A
mJ
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
=12A,
V
GE
= 15V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Pulsed Avalanche Energy
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GE(TH)
I
GES
SSOA
E
AS
V
GEP
Q
g(ON)
I
C
= 250µA, V
CE
= 600V
V
GE
=
±20V
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V
L = 100µH, V
CE
= 600V
I
CE
= 12A, L = 2.1mH, V
DD
= 50V
I
C
= 12A, V
CE
= 300V
I
C
= 12A,
V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= 12A
V
CE
= 390V
V
GE
= 15V
R
G
= 10Ω
L = 200µH
Test Circuit - Figure 20
©2001 Fairchild Semiconductor Corporation
ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3 Rev. A
ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
TEST CONDITIONS
IGBT and Diode at T
J
= 125
o
C
I
CE
= 12A
V
CE
= 390V
V
GE
= 15V
R
G
= 10Ω
L = 200µH
Test Circuit - Figure 20
MIN
-
-
-
-
-
-
-
-
TYP
22
15
80
72
55
230
225
-
MAX
-
-
100
85
-
280
300
0.75
UNITS
ns
ns
ns
ns
µJ
µJ
µJ
o
C/W
Typical Performance Curves
50
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
70
60
50
40
30
20
10
0
V
GE
= 15V
40
T
J
= 150
o
C
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V
30
20
10
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
0
100
200
300
400
500
600
700
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
1000
f
MAX
, OPERATING FREQUENCY (kHz)
V
GE
= 15V
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
T
C
75
o
C
24
140
V
CE
= 390V, R
G
= 10Ω, T
J
= 125
o
C
120
I
SC
20
V
GE
= 12V
16
100
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 0.75
o
C/W, SEE NOTES
T
J
= 125
o
C, R
G
= 10Ω, L = 200µH, V
CE
= 390V
10
1
5
10
20
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
12
t
SC
8
80
60
4
10
11
12
13
14
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
40
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3 Rev. A
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
18
16
14
12
10
8
6
4
2
0
0
0.5
1.0
1.5
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
2.0
2.5
DUTY CYCLE < 0.5%, V
GE
= 12V
PULSE DURATION = 250µs
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
18
16
14
12
10
8
6
4
2
0
0
0.5
1.5
2.0
1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2.5
T
J
= 125
o
C
T
J
= 150
o
C
T
J
= 25
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
400
E
ON2
, TURN-ON ENERGY LOSS (µJ)
R
G
= 10Ω, V
CE
= 390V
350
300
250
200
150
100
50
0
0
2
4
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
6
8
10
12
14
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
275
250
225
200
175
150
125
100
75
50
25
0
0
R
G
= 10Ω, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
2
4
6
8
10
12
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
24
t
d(ON)I
, TURN-ON DELAY TIME (ns)
R
G
= 10Ω, V
CE
= 390V
22
20
T
J
= 125
o
C, V
GE
= 12V
18
16
14
12
10
35
R
G
= 10Ω, V
CE
= 390V
30
T
J
= 25
o
C, V
GE
= 12V
t
rI
, RISE TIME (ns)
25
20
15
10
5
0
0
2
4
6
8
10
12
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 12V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
0
2
4
6
8
10
12
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3 Rev. A
ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3
Typical Performance Curves
90
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
R
G
= 10Ω, V
CE
= 390V
80
70
V
GE
= 12V, T
J
= 125
o
C
60
50
40
30
V
GE
= 12V, T
J
= 25
o
C
20
0
2
4
6
8
10
12
14
V
GE
= 15V, T
J
= 25
o
C
V
GE
= 15V, T
J
= 125
o
C
Unless Otherwise Specified
(Continued)
90
80
t
fI
, FALL TIME (ns)
70
60
50
40
30
20
10
2
4
6
8
10
12
14
16
18
20
22
24
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
R
G
= 10Ω, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
150
125
100
75
50
25
0
6
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250µs
T
J
= 25
o
C
T
J
= -55
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
175
16
14
I
G(REF)
= 1mA, R
L
= 25Ω, T
J
= 25
o
C
V
CE
= 600V
12
10
8
V
CE
= 200V
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
24
V
CE
= 400V
T
J
= 125
o
C
7
8
9
10
11
12
13
14
15
16
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
1.4
1.2
10
R
G
= 10Ω, V
CE
= 390V
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
1.0
0.8
0.6
0.4
0.2
0
25
I
CE
= 12A
I
CE
= 6A
I
CE
= 24A
I
CE
= 24A
1
I
CE
= 12A
I
CE
= 6A
0.1
3
50
75
100
125
150
10
100
R
G
, GATE RESISTANCE (Ω)
1000
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3 Rev. A
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