PD - 94440
IRG4PC60F-P
INSULATED GATE BIPOLAR TRANSISTOR
C
Fast Speed IGBT
V
CES
= 600V
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
• Solder plated version of industry standard
TO-247AC package.
G
E
V
CE(on)
typ.
=
1.50V
@V
GE
= 15V, I
C
= 60A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specified application conditions.
• Solder plated version of the TO-247 allows the reflow
soldering of the package heatsink to a substrate material.
• Designed for best performance when used with IR
HEXFRED & IR FRED companion diodes.
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Maximum Reflow Temperature
W
Max.
600
90
60
120
120
± 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
230 (Time above 183°C
should not exceed 100s)
Units
V
A
V
mJ
W
°C
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (Typical Socket Mount)
Junction-to-Ambient (PCB Mount, Steady State)
V
Weight
Typ.
–––
0.24
–––
–––
6 (0.21)
Max.
0.24
–––
40
20
–––
Units
°C/W
g (oz)
www.irf.com
1
04/26/02
IRG4PC60F-P
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
Emitter-to-Collector Breakdown Voltage
T
16
—
V
(BR)ECS
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —
0.13
—
1.5
V
CE(ON)
Collector-to-Emitter Saturation Voltage
—
1.7
—
1.5
V
GE(th)
Gate Threshold Voltage
3.0
—
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage
—
-11
g
fe
Forward Transconductance
U
36
69
—
—
I
CES
Zero Gate Voltage Collector Current
—
—
—
—
I
GES
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
—
V
V
GE
= 0V, I
C
= 1.0A
—
V/°C V
GE
= 0V, I
C
= 1.0mA
V
GE
= 15V
1.8
I
C
= 60A
—
I
C
= 90A
See Fig.2, 5
V
—
I
C
= 60A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
=
100V, I
C
= 60A
250
V
GE
= 0V, V
CE
= 600V
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
290
40
100
42
66
310
170
0.30
4.6
4.9
39
66
470
300
8.8
13
6050
360
66
Max. Units
Conditions
340
I
C
= 40A
47
nC
V
CC
= 400V
See Fig. 8
130
V
GE
= 15V
—
—
T
J
= 25°C
ns
360
I
C
= 60A, V
CC
= 480V
220
V
GE
= 15V, R
G
= 5.0Ω
—
Energy losses include "tail"
—
mJ
See Fig. 10, 11, 13, 14
6.3
—
T
J
= 150°C,
—
I
C
= 60A, V
CC
= 480V
ns
—
V
GE
= 15V, R
G
= 5.0Ω
—
Energy losses include "tail"
—
mJ
See Fig. 13, 14
—
nH
Measured 5mm from package
—
V
GE
= 0V
—
pF
V
CC
= 30V
See Fig. 7
—
ƒ = 1.0MHz
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, Rg = 5.0W.
(See fig. 13a)
S
Repetitive rating; pulse width limited by maximum
junction temperature.
T
Pulse width
≤
80µs; duty factor
≤
0.1%.
Q
U
Pulse width 5.0µs, single shot.
V
When mounted on 1" square PCB ( FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
W
Refer to application note # 1023, "Surface Mounting of
Larger Devices."
2
www.irf.com
IRG4PC60F-P
80
70
60
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 73W for Heatsink Mount
Power Dissipation = 3.5W for typical
PCB socket Mount
Load Current ( A )
50
40
30
20
10
0
0.1
60% of rated
voltage
Ideal diodes
1
10
100
f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
1000
1000
T J = 150°C
IC , Collector t-to-Emitter Current (A)
100
IC, Collector-to-Emitter Current (A)
100
T J = 150°C
10
10
1
T J = 25°C
VGE = 15V
20µs PULSE WIDTH
0.0
1.0
2.0
3.0
4.0
5.0
1
T J = 25°C
VCC = 10V
5µs PULSE WIDTH
0.01
4
5
6
7
8
9
10
11
0.1
0.1
0.01
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
3
www.irf.com
IRG4PC60F-P
100
3.0
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
VCE , Collector-to Emitter Voltage (V)
90
V GE = 15V
VGE = 15V
80µs PULSE WIDTH
Maximum DC Collector Current (A)
IC = 120A
2.0
IC = 60A
IC = 30A
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T C , Case Temperature (°C)
T J , Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
)
thJC
D = 0.50
0.1
Thermal Response (Z
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
J
= P
DM
0.001
0.00001
t
1
/ t
2
x Z
thJC
0.1
+T
C
0.0001
0.001
0.01
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4PC60F-P
100000
VGE = 0V,
f = 1 MHZ
Cies = C + Cgc, C
ge
ce SHORTED
Cres = C
ce
Coes = C + Cgc
ce
20
V
CC
= 400V
I
C
= 40A
10000
15
Capacitance (pF)
Cies
V
GE
, Gate-to-Emitter Voltage (V)
1000
10
Coes
100
5
Cres
10
0
100
200
300
400
500
0
0
50
100
150
200
250
300
VCE (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
8.00
VCC = 480V
VGE = 15V
TJ = 25°C
I C = 60A
100
RG = 5.0
Ω
VGE = 15V
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VCC = 480V
IC = 120A
7.00
6.00
10
IC = 60A
5.00
IC = 30A
4.00
0
10
20
30
40
50
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R G, Gate Resistance (
Ω
)
T J, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
www.irf.com
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
