PD - 97235
IRF6629PbF
IRF6629TRPbF
RoHs Compliant
Typical values (unless otherwise specified)
l
Lead-Free (Qualified up to 260°C Reflow)
V
DSS
V
GS
R
DS(on)
R
DS(on)
l
Application Specific MOSFETs
25V max ±20V max 1.6mΩ@ 10V 2.1mΩ@ 4.5V
l
Ideal for CPU Core DC-DC Converters
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
l
Low Conduction Losses
34nC
11nC
4.2nC
27nC
23nC
1.8V
l
High Cdv/dt Immunity
l
Low Profile (<0.7mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount Techniques
l
DirectFET Power MOSFET
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
DirectFET ISOMETRIC
Description
The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6629PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6629PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6629PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
8
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
25
±20
29
23
180
230
1170
23
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
20
30
ID= 23A
VDS= 20V
VDS= 13V
A
mJ
A
7
6
5
4
3
2
1
0
2
T J = 25°C
4
6
8
10
12
ID = 29A
VDS= 5.0V
T J = 125°C
14
16
40
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 4.4mH, R
G
= 25Ω, I
AS
= 23A.
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1
07/11/06
IRF6629PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
17
1.6
2.1
1.8
-6.2
–––
–––
–––
–––
–––
34
7.8
4.2
11
11
15
23
1.3
20
67
20
7.4
4260
1130
550
–––
–––
2.1
2.7
2.35
–––
1.0
150
100
-100
–––
51
–––
–––
–––
–––
–––
–––
3.2
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 29A
i
V
GS
= 4.5V, I
D
= 23A
i
V
mV/°C
µA
nA
S
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 23A
V
DS
= 13V
nC
V
GS
= 4.5V
I
D
= 23A
See Fig. 15
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
i
I
D
= 23A
Clamped Inductive Load
See Fig. 17
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
V
DS
= V
GS
, I
D
= 100µA
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
g
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
22
27
230
1.0
33
41
V
ns
nC
Min.
–––
Typ. Max. Units
–––
3.5
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 23A, V
GS
= 0V
i
T
J
= 25°C, I
F
= 23A
di/dt = 220A/µs
i
See Fig. 18
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6629PbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.8
1.8
100
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
10
Thermal Response ( Z thJA )
em
km
lm
fm
Parameter
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.2
–––
Units
°C/W
eÃ
W/°C
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
A
τ
A
Ri (°C/W)
τi
(sec)
7.628
0.069875
20.661
16.718
1.140300
39.9
τ
1
τ
2
τ
3
Ci=
τi/Ri
Ci=
τi/Ri
0.001
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
10
100
1000
0.0001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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3
IRF6629PbF
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
≤
60µs PULSE WIDTH
0.1
0.1
1
Tj = 25°C
10
1
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
1000
100
1000
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
≤60µs
PULSE WIDTH
100
T J = 150°C
10
T J = 25°C
T J = -40°C
Fig 5.
Typical Output Characteristics
1.6
ID = 29A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current (A)
1.4
1.2
1.0
V GS = 10V
V GS = 4.5V
1
0.8
0.1
1
2
3
4
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
Fig 7.
Normalized On-Resistance vs. Temperature
10
T J = 25°C
8
Typical RDS(on) ( mΩ)
C, Capacitance(pF)
10000
Ciss
Coss
Crss
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
6
4
1000
2
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
4
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IRF6629PbF
1000
VGS = 0V
T J = 150°C
100
T J = 25°C
T J = -40°C
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100µsec
100
1msec
10
10msec
10
1
T A = 25°C
T J = 150°C
0.1
Single Pulse
1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
0.01
0.10
1.00
10.00
100.00
Fig 10.
Typical Source-Drain Diode Forward Voltage
200
180
160
ID, Drain Current (A)
3.0
Typical VGS(th) Gate threshold Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 11.
Maximum Safe Operating Area
2.5
140
120
100
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.0
1.5
ID = 100µA
ID = 250µA
1.0
ID = 1.0mA
ID = 1.0A
0.5
-75 -50 -25 0
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
5000
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
0.71A
1.2A
BOTTOM 23A
4000
3000
2000
1000
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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