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SMAJ75-M3/5A

产品描述Trans Voltage Suppressor Diode, 75V V(RWM), Unidirectional,
产品类别分立半导体    二极管   
文件大小89KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
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SMAJ75-M3/5A概述

Trans Voltage Suppressor Diode, 75V V(RWM), Unidirectional,

SMAJ75-M3/5A规格参数

参数名称属性值
是否Rohs认证符合
Reach Compliance Codeunknown
ECCN代码EAR99
击穿电压标称值92.65 V
最大钳位电压134 V
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
极性UNIDIRECTIONAL
最大重复峰值反向电压75 V
表面贴装YES
Base Number Matches1

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New Product
SMAJ5.0 thru SMAJ188CA
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 % (300 W
above 78 V)
• Excellent clamping capability
• Very fast response time
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
V
WM
P
PPM
I
FSM
T
J
max.
5.0 V to 188 V
400 W, 300 W
40 A
150 °C
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional use C or CA suffix (e.g. SMAJ10C,
SMAJ10CA).
Electrical characteristics apply in both directions.
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a waveform
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
SYMBOL
P
PPM (1)(2)
I
PPM (1)
I
FSM (2)
T
J
, T
STG
VALUE
400
See next table
40
- 55 to + 150
UNIT
W
A
A
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2, rating is 300 W above 78 V
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Document Number: 89277
Revision: 20-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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