SKiiP 25NABI066V3
Absolute Maximum Ratings
Symbol
V
CES
I
C
I
C
Conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 175 °C
I
CRM
= 2 x I
Cnom
V
CC
= 360 V
V
GE
≤
15 V
V
CES
≤
600 V
T
s
= 25 °C
T
s
= 70 °C
T
s
= 25 °C
T
s
= 70 °C
Values
600
37
28
41
33
30
60
T
j
= 150 °C
6
-40 ... 175
600
T
s
= 25 °C
T
s
= 70 °C
T
s
= 25 °C
T
s
= 70 °C
37
28
41
33
30
60
T
j
= 150 °C
6
-40 ... 175
600
T
s
= 25 °C
T
s
= 70 °C
T
s
= 25 °C
T
s
= 70 °C
33
25
37
29
30
60
160
-40 ... 175
Unit
V
A
A
A
A
A
A
µs
°C
V
A
A
A
A
A
A
µs
°C
V
A
A
A
A
A
A
A
°C
V
A
A
A
A
A
A
A
°C
Inverter - IGBT
MiniSKiiP CIB IPM
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
intelligent power module
SKiiP 25NABI066V3
Features
• Contact springs for solder-free and
quick assembly
• Trench-Field-Stop IGBT
• Freewheeling diodes in CAL
technology
• HVIC gate driver in SOI technology with
advanced level shifter
• Matched propagation delay
• Over-current and under-voltage
detection
• Interlock logic for cross conduction
protection
• Multi-purpose error input
• Integrated temperature sensor (NTC)
• RoHs compliant
• UL recognised file no. E63532
®
I
Cnom
I
CRM
t
psc
T
j
V
CES
I
C
I
C
I
Cnom
I
CRM
t
psc
T
j
V
RRM
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
j
Freewheeling - Diode
V
RRM
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
j
I
FRM
= 2 x I
Fnom
t
p
= 10 ms, sin 180°, T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 175 °C
T
s
= 25 °C
T
s
= 70 °C
T
s
= 25 °C
T
s
= 70 °C
I
FRM
= 2 x I
Fnom
t
p
= 10 ms, sin 180°, T
j
= 150 °C
I
CRM
= 2 x I
Cnom
V
CC
= 360 V
V
GE
≤
15 V
V
CES
≤
600 V
Chopper - IGBT
T
j
= 25 °C
T
j
= 150 °C
T
j
= 175 °C
Inverse - Diode
T
j
= 25 °C
T
j
= 150 °C
T
j
= 175 °C
Typical Applications*
• Industrial & consumer drives
• Power supplies (SMPS & UPS)
600
33
25
37
29
30
60
160
-40 ... 175
Remarks
• Product reliability results valid for
T
j
≤150°C
• Case temp. limited to T
c
= 125°C max.
(for baseplateless modules T
c
= T
s
Footnotes
1)
Please refer to Technical Explanations
NABI
© by SEMIKRON
Rev. 0 – 06.07.2012
1
SKiiP 25NABI066V3
Absolute Maximum Ratings
Symbol
V
RRM
I
F
I
FSM
I
2
t
Conditions
T
j
= 25 °C, chiplevel
T
s
= 25 °C, T
j
= 150 °C
10 ms
sin 180°
10 ms
sin 180°
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
Values
1600
43
370
270
685
365
-40 ... 150
Unit
V
A
A
A
A
2
s
A
2
s
°C
V
V
V
V
V
mA
V
°C
°C
V
A
Rectifier - Diode
MiniSKiiP
®
CIB IPM
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
intelligent power module
SKiiP 25NABI066V3
Features
• Contact springs for solder-free and
quick assembly
• Trench-Field-Stop IGBT
• Freewheeling diodes in CAL
technology
• HVIC gate driver in SOI technology with
advanced level shifter
• Matched propagation delay
• Over-current and under-voltage
detection
• Interlock logic for cross conduction
protection
• Multi-purpose error input
• Integrated temperature sensor (NTC)
• RoHs compliant
• UL recognised file no. E63532
T
j
Driver
VCC
VBx
VSx
V
in
V
oErr
I
max(EO)
V
ITRIP
Module
T
c
T
stg
V
isol
I
t(RMS)
AC sinus 50Hz, all pins to heat sink,
1 min
T
terminal
= 80 °C, 20A per spring
VCC-VSS, VCCL-VSSL
VB1-U, VB2-V, VB3-W
Voltage to VSS
HINx-VSS, LINx-VSS, /ERRIN-VSS
/ERROUT-VSS
/ERROUT-VSS
ITRIP-VSS
17
17
-25 ... 600
VSS-0.3 ... VCC+0.3
VSS-0.3 ... VCC+0.3
10
VSS-0.3 ... VCC+0.3
-40 ... 125
-40 ... 125
2500
60
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
min.
typ.
1.50
1.65
0.9
0.85
20
27
0.1
165
max.
1.90
2.10
1
0.9
30
40
0.3
Unit
V
V
V
V
m
m
mA
mA
nC
ns
ns
mJ
ns
ns
mJ
K/W
Inverter - IGBT
I
C
= 30 A
V
CE(sat)
V
GE
= 15 V
chiplevel
V
CE0
chiplevel
r
CE
I
CES
Q
G
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
per IGBT
V
CC
= 300 V
I
C
= 30 A
V
GE
= +15/0 V
1)
V
GE
= 15 V
chiplevel
V
GE
= 0 V
V
CE
= 600 V
0 V ... +15 V
Typical Applications*
• Industrial & consumer drives
• Power supplies (SMPS & UPS)
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
855
34
1.1
1273
34
1
1.4
Remarks
• Product reliability results valid for
T
j
≤150°C
• Case temp. limited to T
c
= 125°C max.
(for baseplateless modules T
c
= T
s
Footnotes
1)
Please refer to Technical Explanations
NABI
2
Rev. 0 – 06.07.2012
© by SEMIKRON
SKiiP 25NABI066V3
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
CC
= 300 V
I
C
= 30 A
V
GE
= +15/0 V
1)
min.
typ.
1.50
1.65
0.9
0.85
20
27
0.1
855
34
1.1
1273
34
1
1.4
max.
1.90
2.10
1
0.9
30
40
0.3
Unit
V
V
V
V
m
m
mA
mA
ns
ns
mJ
ns
ns
mJ
K/W
Chopper - IGBT
I
C
= 30 A
V
CE(sat)
V
GE
= 15 V
chiplevel
V
CE0
chiplevel
r
CE
V
GE
= 15 V
chiplevel
V
GE
= 0 V
V
CE
= 600 V
MiniSKiiP
®
CIB IPM
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
intelligent power module
SKiiP 25NABI066V3
Features
• Contact springs for solder-free and
quick assembly
• Trench-Field-Stop IGBT
• Freewheeling diodes in CAL
technology
• HVIC gate driver in SOI technology with
advanced level shifter
• Matched propagation delay
• Over-current and under-voltage
detection
• Interlock logic for cross conduction
protection
• Multi-purpose error input
• Integrated temperature sensor (NTC)
• RoHs compliant
• UL recognised file no. E63532
I
CES
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
per IGBT
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
Inverse diode
V
F
= V
EC
I
F
= 30 A
V
GE
= 0 V
chiplevel
V
F0
chiplevel
r
F
I
RRM
Q
rr
E
rr
R
th(j-s)
chiplevel
I
F
= 30 A
V
GE
= 0 V
V
CC
= 300 V
per Diode
1.6
1.7
1
0.85
21
29
43
3.4
0.7
1.8
1.9
2.0
1.1
0.95
26
34
V
V
V
V
m
m
A
µC
mJ
K/W
Freewheeling - Diode
V
F
= V
EC
I
F
= 30 A
V
GE
= 0 V
chiplevel
V
F0
chiplevel
r
F
I
RRM
Q
rr
E
rr
R
th(j-s)
chiplevel
I
F
= 30 A
V
GE
= 0 V
V
CC
= 300 V
per Diode
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
1.6
1.7
1
0.85
21
29
43
3.4
0.7
1.8
1.9
2.0
1.1
0.95
26
34
V
V
V
V
m
m
A
µC
mJ
K/W
Typical Applications*
• Industrial & consumer drives
• Power supplies (SMPS & UPS)
Remarks
• Product reliability results valid for
T
j
≤150°C
• Case temp. limited to T
c
= 125°C max.
(for baseplateless modules T
c
= T
s
Footnotes
1)
Please refer to Technical Explanations
Rectifier diode
V
F
= V
EC
I
F
= 13 A
V
GE
= 0 V
chiplevel
V
F0
chiplevel
r
F
R
th(j-s)
chiplevel
per Diode
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
1
1.21
1.1
1.0
0.8
V
V
V
V
m
m
K/W
9.2
1.7
18
21
NABI
© by SEMIKRON
Rev. 0 – 06.07.2012
3
SKiiP 25NABI066V3
Characteristics
Symbol
Driver
VCC
ICCo
VBx
IBx
VCC-VSS, VCCL-VSSL
1)
Quiescent current, VCC=15V
1)
VB1-U, VB2-V, VB2-W
Quiescent high side driver supply
current per channel, VBx=15V
1)
Input threshold voltage (HIGH)
1)
Input threshold voltage (LOW)
1)
ITRIP set threshold voltage
Error output, open drain
1)
1)
1)
Conditions
min.
typ.
15
max.
Unit
V
6.5
15
380
1.9
0.8
0.35
10.5
1)
mA
V
µA
V
V
V
V
V
V
V
ns
µs
µs
450
2.4
0.6
15
MiniSKiiP
®
CIB IPM
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
intelligent power module
SKiiP 25NABI066V3
Features
• Contact springs for solder-free and
quick assembly
• Trench-Field-Stop IGBT
• Freewheeling diodes in CAL
technology
• HVIC gate driver in SOI technology with
advanced level shifter
• Matched propagation delay
• Over-current and under-voltage
detection
• Interlock logic for cross conduction
protection
• Multi-purpose error input
• Integrated temperature sensor (NTC)
• RoHs compliant
• UL recognised file no. E63532
V
IT+
V
IT-
V
ITRIP+
V
ITRIP-
V
oErr
V
UV
V
UVr
t
d,ITRIP
t
SIS
t
TD
f
SW
R
25
Module
M
s
w
1.1
0.51
0.41
11.1
11.5
700
0.47
0.48
25
5.0 ± 5%
12.3
ITRIP reset threshold voltage
1)
Supply under-voltage protection set
1)
Supply under-voltage protection reset
ITRIP to LOUTx/HOUTx shutdown
propagation delay
PWM short pulse suppression
Interlock dead time
Switching frequency
T
r
= 25 °C
1)
to heat sink
weight
kHz
k
Temperatur Sensor
2
60
2.5
Nm
g
Typical Applications*
• Industrial & consumer drives
• Power supplies (SMPS & UPS)
Remarks
• Product reliability results valid for
T
j
≤150°C
• Case temp. limited to T
c
= 125°C max.
(for baseplateless modules T
c
= T
s
Footnotes
1)
Please refer to Technical Explanations
NABI
4
Rev. 0 – 06.07.2012
© by SEMIKRON
SKiiP 25NABI066V3
Fig. 1: Typ. output characteristic
Fig. 2: Typ. rated current vs. temperature I
C
= f(T
S
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. switching times vs. I
c
Fig. 5: Transient thermal impedance of IGBT and diode
Fig. 6: Typ. freewheeling diode forward characteristic
© by SEMIKRON
Rev. 0 – 06.07.2012
5
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