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RD48F2000P0XBQ0A

产品描述4MX16 FLASH 3V PROM, 85ns, PBGA80, 8 X 10 MM, 1.20 MM HEIGHT, SCSP-88/80
产品类别存储    存储   
文件大小1MB,共96页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
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RD48F2000P0XBQ0A概述

4MX16 FLASH 3V PROM, 85ns, PBGA80, 8 X 10 MM, 1.20 MM HEIGHT, SCSP-88/80

RD48F2000P0XBQ0A规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
零件包装代码BGA
包装说明TFBGA,
针数88/80
Reach Compliance Codecompliant
最长访问时间85 ns
其他特性SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
JESD-30 代码R-PBGA-B80
长度10 mm
内存密度67108864 bit
内存集成电路类型FLASH
内存宽度16
功能数量1
端子数量80
字数4194304 words
字数代码4000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织4MX16
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)235
编程电压3 V
认证状态Not Qualified
座面最大高度1.2 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.3 V
标称供电电压 (Vsup)3 V
表面贴装YES
温度等级INDUSTRIAL
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度8 mm
Base Number Matches1

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Numonyx™ StrataFlash
®
Embedded Memory
(P33)
Datasheet
Product Features
High performance:
— 85 ns initial access
— 52MHz with zero wait states, 17ns clock-to-
data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst
mode
— Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
— 3.0 V buffered programming at 7 µs/byte
(Typ)
Architecture:
— Multi-Level Cell Technology: Highest
Density at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or
bottom configuration
— 128-KByte main blocks
Voltage and Power:
— V
CC
(core) voltage: 2.3 V – 3.6 V
— V
CCQ
(I/O) voltage: 2.3 V – 3.6 V
— Standby current: 35µA (Typ) for 64-Mbit
— 4-Word synchronous read current:
16 mA (Typ) at 52MHz
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology
Security:
— One-Time Programmable Registers:
— 64 unique factory device identifier bits
— 2112 user-programmable OTP bits
— Selectable OTP space in Main Array:
— Four pre-defined 128-KByte blocks (top or
bottom configuration).
— Up to Full Array OTP Lockout
— Absolute write protection: V
PP
= V
SS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down capability
Software:
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
— Numonyx™ Flash Data Integrator optimized
— Basic Command Set and Extended
Command Set compatible
— Common Flash Interface capable
Density and Packaging
— 56-Lead TSOP package (64, 128, 256, 512-
Mbit)
— 64-Ball Numonyx™ Easy BGA package (64,
128, 256, 512-Mbit)
— Numonyx™ QUAD+ SCSP (64, 128, 256,
512-Mbit)
— 16-bit wide data bus
314749-05
November 2007

 
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