FFSB2065BDN-F085
Silicon Carbide Schottky
Diode
650 V, 20 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
Features
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1. Anode
2. Cathode/ 3. Anode
Case
Schottky Diode
•
•
•
•
•
•
•
Max Junction Temperature 175°C
Avalanche Rated 49 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
AEC−Q101 Qualified and PPAP Capable
2
1
3
D
2
PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
MARKING DIAGRAM
Applications
•
Automotive BEV−EV
•
Automotive HEV−EV Onboard Chargers
•
Automotive HEV−EV DC−DC Converters
MOSFET MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Symbol
V
RRM
E
AS
I
F
Parameter
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Recti-
fied Forward
Current
Non−Repetitive
Peak Forward
Surge Current
@ T
C
< 25°C
@ T
C
< 140°C
T
C
= 25°C, 10
ms
T
C
= 150°C, 10
ms
Ratings
650
49
23.6
10
600
554
45
A
A
Unit
V
mJ
A
$Y&Z&3&K
FFSB
2065BDN
I
F, Max
$Y
&Z
&3
&K
FFSB2065BDN
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
I
F, SM
Half−Sine Pulse,
Non−Repetitive
t
p
= 8.3 ms
Forward Surge
Current, T
C
= 25°C
Power Dissipation
T
C
= 25°C
T
C
= 150°C
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
P
tot
75
12.5
−55
to +175
W
T
J
, T
STG
Operating and Storage Temperature
Range
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. E
AS
of 49 mJ is based on starting T
J
= 25°C, L = 0.5 mH, I
AS
= 14 A, V = 50 V.
©
Semiconductor Components Industries, LLC, 2013
September, 2019
−
Rev. 2
1
Publication Order Number:
FFSB2065BDN−F085/D
FFSB2065BDN−F085
THERMAL CHARACTERISTICS
Symbol
R
qJC
Parameter
Thermal Resistance, Junction to Case, Max
Ratings
2.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted
−
per leg)
Symbol
V
F
Parameter
Forward Voltage
Test Conditions
I
F
= 10 A, T
C
= 25°C
I
F
= 10 A, T
C
= 125°C
I
F
= 10 A, T
C
= 175°C
I
R
Reverse Current
V
R
= 650 V, T
C
= 25°C
V
R
= 650 V, T
C
= 125°C
V
R
= 650 V, T
C
= 175°C
Q
C
C
Total Capacitive Charge
Total Capacitance
V = 400 V
V
R
= 1 V, f = 100 kHz
V
R
= 200 V, f = 100 kHz
V
R
= 400 V, f = 100 kHz
Min
−
−
−
−
−
−
−
−
−
−
Typ.
1.38
1.6
1.72
0.5
1
2
25
421
46
35
Max.
1.75
2.0
2.4
40
80
160
−
−
−
−
nC
pF
mA
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
FFSB2065BDN−F085
Top Mark
FFSB2065BDN
Package
D2PAK
Shipping
†
800 Units/
Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
FFSB2065BDN−F085
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
20
I
F
, FORWARD CURRENT (A)
I
R
, REVERSE CURRENT (A)
T
J
=
−55°C
T
J
= 25°C
10
−5
15
T
J
= 175°C
T
J
= 125°C
T
J
= 75°C
10
−6
T
J
= 175°C
10
10
−7
T
J
= 125°C
5
10
−8
T
J
= 25°C
T
J
= 75°C
0
0
0.5
1
2
3
1.5
2.5
V
F
, FORWARD VOLTAGE (V)
3.5
4
10
−9
200
T
J
=
−55°C
300
400
500
V
R
, REVERSE VOLTAGE (V)
600
650
Figure 1. Forward Characteristics
120
I
F
, PEAK FORWARD CURRENT (A)
D = 0.1
Figure 2. Reverse Characteristics
100
P
TOT
, POWER DISSIPATION (W)
80
60
40
20
0
25
90
D = 0.2
D = 0.3
D = 0.5
60
30
D=1
D = 0.7
0
25
50
75
100
125
150
175
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (5C)
T
C
, CASE TEMPERATURE (5C)
Figure 3. Current Derating
40
Q
C
, CAPACITIVE CHARGE (nC)
1000
Figure 4. Power Derating
20
CAPACITIANCE (pF)
0
100
200
300
400
500
600 650
30
100
10
0
10
0.1
V
R
, REVERSE VOLTAGE (V)
1
10
100
V
R
, REVERSE VOLTAGE (V)
650
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSB2065BDN−F085
TYPICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted) (continued)
10
E
C
, CAPACITIVE ENERGY (mJ)
8
6
4
2
0
0
100
200
300
400
500
600 650
V
R
, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
DUTY CYCLE
−
DESCENDING ORDER
D = 0.5
P
DM
0.1
D = 0.1
D = 0.05
D = 0.2
t
1
t
2
0.01
D = 0.02
D = 0.01
SINGLE PULSE
NOTES:
Z
qJC
(t) = r(t)
×
R
qJC
R
qJC
= 2.0°C/W
Peak T
J
= P
DM
×
Z
qJC
(t) + T
C
Duty cycle, D = t
1
/t
2
0.001
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1
W
V
DD
= 50 V
EAVL = 1/2LI2 [V
R(AVL)
/ (V
R(AVL)
−
V
DD
)]
Q1 = IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
DUT
R
+
V
DD
V
DD
−
I V
V
AVL
Q1
I
L
I
L
t
0
t
1
t
2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
FFSB2065BDN−F085
PACKAGE DIMENSIONS
D
2
PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE C
B
E
E2
A
NOTE 3
SEATING
PLANE
A
c2
A
D1
L1
L1
H
D
DETAIL C
E1
0.10
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CHAMFER OPTIONAL
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH. MOLD FLASH SHALL NOT EXCEED 0.005
PER SIDE. THESE DIMENSIONS ARE MEASURED
AT THE OUTERMOST EXTREMES OF THE PLAS-
TIC BODY AT DATUM H.
5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN
DIMENSIONS E, L1, D1 AND E1.
B A
M
L2
e
2X
c
b
0.10
SIDE VIEW
M
A
VIEW A−A
M
TOP VIEW
B A
GAUGE
PLANE
H
L3
L
M
A1
DETAIL C
B
SEATING
PLANE
DIM
A
A1
b
c
c2
D
D1
E
E1
e
H
L
L1
L2
L3
M
INCHES
MIN
MAX
0.160 0.190
0.000 0.010
0.020 0.039
0.012 0.029
0.045 0.065
0.330 0.380
0.260
−−−−
0.380 0.420
0.245
−−−−
0.100 BSC
0.575 0.625
0.070
0.110
−−−−
0.066
−−−−
0.070
0.010 BSC
−8
°
8
°
MILLIMETERS
MIN
MAX
4.06
4.83
0.00
0.25
0.51
0.99
0.30
0.74
1.14
1.65
8.38
9.65
6.60
−−−−
9.65 10.67
6.22
−−−−
2.54 BSC
14.60 15.88
1.78
2.79
−−−−
1.68
−−−−
1.78
0.25 BSC
−8
°
8
°
OPTIONAL CONSTRUCTIONS
VIEW A−A
RECOMMENDED
SOLDERING FOOTPRINT*
0.436
0.366
0.653
0.169
0.063
0.100
PITCH
DIMENSIONS: INCHES
2X
2X
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
FPGA/CPLD
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