SMD Type
Silicon Schottky Barrier Diode
HSC226
Diodes
SOD-523
+0.05
0.3
-0.05
+0.1
1.2
-0.1
Unit: mm
+0.1
0.6
-0.1
Low reverse current, Low capacitance.
Ultra small Flat Package (UFP) is suitable for surface mount design.
+0.05
0.8
-0.05
Features
+
-
+0.1
1.6
-0.1
0.77max
0.07max
Absolute M axim um Ratings Ta = 25
Param eter
Repetitive peak reverse voltage
Non-Repetitive peak forward surge current
Forward current
Junction tem perature
Storage tem perature
Note
10m s Sinewave 1pulse
Sym bol
V
RRM
I
FSM
*
I
F
T
j
T
stg
Value
25
200
50
125
-55 to +125
Unit
V
mA
mA
Electrical Characteristics Ta = 25
Param eter
Forward voltage
Reverse current
Capacitance
Sym bol
V
F
I
R
C
Conditions
I
F
= 1 m A
I
F
= 5 m A
V
R
= 20 V
V
R
=1 V, f = 1 M Hz
M in
Typ
M ax
0.33
0.38
0.45
2.80
A
pF
Unit
V
Marking
Marking
S4
+0.05
0.1
-0.02
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