power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
ters, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
intpnrated circuits.
•
r
DS(ON)
=
0-077U and O.IOOfi
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
Components to PC Boards"
Ordering Information
PART NUMBER
IRF540
IRF541
IRF542
IRF543
RF1S540
RF1S540SM
PACKAGE
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-262AA
TO-263AB
BRAND
IRF540
IRF541
IRF542
IRF543
RF1S540
RF1S540SM
Symbol
Go-
As
JEDEC TO-220AB
JEDEC TO-262AA
DRAIN
(FLANGE)
DRAIN (FLANGE)
JEDEC TO-263AB
DRAIN
(FLANGE)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
Absolute Maximum Ratings
T
c
=
25°C, Unless Otherwise Specified
IRF540, RF1S540,
RF1S540SM
IRF541
IRF542
IRF543
UNITS
V
V
A
A
A
V
Drain to Source Breakdown Voltage (Note 1)
Drain to Gate Voltage (R
GS
= 20kQ) (Note 1)
Continuous Drain Current
T
c
= 100°C
Pulsed Drain Current (Note 3)
Gate to Source Voltage
Maximum Power Dissipation
Dissipation Derating Factor
Single Pulse Avalanche Energy Rating (Note 4)
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
VDS
V
DG
R
ID
ID
IDM
V
G
s
PD
EAS
Tj TSTG
1
00
100
28
20
110
±20
150
1
230
~
55 to 175
80
80
28
20
110
±20
150
1
230
-55 to 175
100
100
25
17
100
±20
150
1
230
-55
to
175
80
80
25
17
100
±20
150
1
230
-55 to 1 75
w
w/°c
mj
°C
300
T
L
300
300
300
°C
260
260
°C
260
260
Ipkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
