Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-247 package
・High
voltage ,high speed
APPLICATIONS
・Switching
Regulators
・Inverters
・Solenoids
・Relay
Drivers
・Motor
Controls
・Deflection
Circuits
PINNING (see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
MJW16010
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
j
T
stg
PARAMETER
固电
导½
半
HA
INC
Collector current
Base current
Base current-peak
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
ES
NG
Open emitter
MIC
E
CONDITIONS
OR
CT
NDU
O
VALUE
850
450
6
15
20
10
15
UNIT
V
V
V
A
A
A
A
W
W/℃
℃
℃
Open base
Open collector
Collector current-peak
Total Power Dissipation
Derate above 25℃
Junction temperature
Storage temperature
T
C
=25℃
135
1.11
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.93
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
I
CER
I
CEV
I
EBO
h
FE
C
OB
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
CONDITIONS
I
C
=0.1A ;I
B
=0
I
C
=5A; I
B
=0.7A
I
C
=10A ;I
B
=1.3A
T
C
=100℃
I
C
=10A ;I
B
=1.3A
T
C
=100℃
V
CE
=850V;R
BE
=50Ω;T
C
=100℃
V
CE
=850V; V
BE(off)
=1.5V
T
C
=100℃
V
EB
=6V; I
C
=0
I
C
=15A ; V
CE
=5V
5
MIN
450
MJW16010
TYP.
MAX
UNIT
V
2.5
3.0
3.0
1.5
1.5
2.5
0.25
1.5
1.0
V
V
V
mA
mA
mA
Switching times resistive load
t
d
t
r
t
s
t
f
Delay time
Rise time
固电
导½
半
V
CB
=10V,I
E
=0;f=1.0KHz
ANG
CH
IN
Storage time
Fall time
MIC
E SE
OR
CT
NDU
O
400
20
200
1200
200
pF
ns
ns
ns
ns
I
C
=10A ; V
CC
=250V
I
B1
=1.3A ;I
B2
=2.6A
PW=30μs; R
B2
=1.6Ω
Duty Cycle≤2.0%
2
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