HMC633LC4
v03.0514
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5.5 - 17 GHz
Typical Applications
The HMC633LC4 is ideal for:
Features
Gain: 30 dB
P1dB: +23 dBm
Saturated Power: +23.8 dBm @ 24% PAE
Supply Voltage: +5V @180 mA
50 Ohm Matched Input/Output
24 Lead Ceramic 4x4mm SMT Package: 16mm
2
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• LO Driver for Mixers
• Military & Space
Functional Diagram
General Description
The HMC633LC4 is a GaAs PHEMT MMIC Driver
Amplifier in a leadless 4x4 mm ceramic surface mount
package which operates between 5.5 and 17 GHz.
The amplifier provides up to 30 dB of gain, +30 dBm
Output IP3, and +23 dBm of output power at 1 dB
gain compression, while requiring 180 mA from a +5V
supply. The HMC633LC4 is an ideal driver amplifier
for microwave radio applications from 5.5 to 17 GHz
and may be biased at +5V, 130 mA to provide 2 dB
lower gain with improved PAE. The amplifier’s I/Os are
DC blocked and matched to 50 Ohms with no external
matching required.
Electrical Specifications,
T
A
= +25° C, Vdd
1-4
= 5V, Idd= 180mA
[1]
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd) (Idd = Idd
1
+ Idd
2
+ Idd
3
+ Idd
4
)
[1] Adjust Vgg between -2 to 0V to achieve Idd= 180 mA typical.
20
26
Min.
Typ.
5.5 - 9
30
0.030
22
22
23
23.8
30
10
180
18
0.040
25
Max.
Min.
Typ.
9 - 17
28
0.030
17
15
21
22
29
7
180
0.040
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC633LC4
v03.0514
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5.5 - 17 GHz
Broadband Gain & Return Loss
40
30
20
RESPONSE (dB)
S11
S21
S22
Gain vs. Temperature
35
30
25
GAIN (dB)
20
15
10
5
0
+25 C
+85 C
-55 C
10
0
-10
-20
-30
-40
2
4
6
8
10
12
14
16
18
20
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
+25 C
+85 C
-40 C
P1dB vs. Temperature
30
Psat vs. Temperature
30
+25 C
+85 C
-40 C
26
P1dB (dBm)
Psat (dBm)
27
24
22
21
18
+25 C
+85 C
-40 C
18
14
4
8
12
FREQUENCY (GHz)
16
20
15
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
2
HMC633LC4
v03.0514
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5.5 - 17 GHz
Power Compression @ 11 GHz
35
Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 17 GHz
35
Pout (dBm), GAIN (dB), PAE (%)
30
25
20
15
10
5
0
-20
Pout (dBm)
Gain (dB)
PAE (%)
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
30
25
20
15
10
5
0
-20
Pout (dBm)
Gain (dB)
PAE (%)
-18
-16
-14
-12
-10
-8
-6
-4
-2
-18
-16
-14
-12
-10
-8
-6
-4
-2
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
36
Noise Figure vs. Temperature
16
14
32
NOISE FIGURE (dB)
12
10
8
6
4
2
+25 C
+85 C
-40 C
IP3 (dBm)
28
+25 C
+85 C
-40 C
24
20
16
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
0
4
6
8
10
12
14
16
18
FREQUENCY (GHz)
Gain & Power vs. Supply Voltage @ 11 GHz
35
GAIN (dB), P1dB (dBm), Psat (dBm)
Reverse Isolation vs. Temperature
0
30
ISOLATION (dB)
-20
25
-40
+25 C
+85 C
-40 C
20
Gain
P1dB
Psat
-60
15
4.5
-80
4.7
4.9
Vdd (V)
5.1
5.3
5.5
2
5
8
11
14
17
20
FREQUENCY (GHz)
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC633LC4
v03.0514
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5.5 - 17 GHz
Gain, Power & Output IP3
vs. Gate Voltage @ 11 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
35
Idd
Absolute Maximum Ratings
210
Gate Bias Voltage (Vgg)
180
-3 to 0V
+5 dBm
175 °C
0.99 W
90.23 °C/W
-65 to +150 °C
-40 to +85 °C
30
RF Input Power (RFIN)(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 11.08 mW/°C above 85 °C)
Thermal Resistance
(channel to package bottom)
Storage Temperature
Idd (mA)
25
150
20
Gain
P1dB
Psat
IP3
120
15
-0.8
-0.78
-0.76
-0.74
Vgg (V)
-0.72
-0.7
90
-0.68
Operating Temperature
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Vdd
Vdd (V)
4.5
5.0
5.5
Idd (mA)
177
180
182
Note: Amplifier will operate over full voltage ranges shown above
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
4
Drain Bias Voltage
(Vdd1, Vdd2, Vdd3, Vdd4)
+5.5V
HMC633LC4
v03.0514
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5.5 - 17 GHz
Outline Drawing
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80
MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST
BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
HMC633LC4
Package Body Material
Alumina, White
Lead Finish
Gold over Nickel
MSL Rating
MSL3
[1]
Package Marking
[2]
H633
XXXX
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
