SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
High Power Density Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
DO-214AA (SMB)
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
V
WM
P
PPM
(uni-directional)
P
PPM
(bi-directional)
I
FSM
(uni-directional only)
T
J
max.
5.0 V to 40 V
1000 W
800 W
100 A
150 °C
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
with a 10/1000 μs waveform
(1)(2)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
uni-directional
bi-directional
SYMBOL
P
PPM
I
PPM
P
D
T
J
, T
STG
VALUE
1000
800
See next table
100
- 55 to 150
UNIT
W
A
W
°C
Revision: 13-Mar-12
Document Number: 88422
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
UNI-DIRECTIONAL
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
1AE
1AG
1AK
1AM
1AP
1AR
1AT
1AV
1AX
1AZ
1BE
1BG
1BK
1BM
1BP
1BR
1BT
1BV
1BX
1BZ
1CE
1CG
1CK
1CM
1CP
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
SMB10J5.0A
SMB10J6.0A
SMB10J6.5A
SMB10J7.0A
SMB10J7.5A
SMB10J8.0A
SMB10J8.5A
SMB10J9.0A
SMB10J10A
SMB10J11A
SMB10J12A
SMB10J13A
SMB10J14A
SMB10J15A
SMB10J16A
SMB10J17A
SMB10J18A
SMB10J20A
SMB10J22A
SMB10J24A
SMB10J26A
SMB10J28A
SMB10J30A
SMB10J33A
SMB10J36A
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
MAX.
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
TEST
CURRENT
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
1000
1000
500
200
100
50
20
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE SURGE
CURRENT
I
PPM (2)
(A)
108.7
97.1
89.3
83.3
77.5
73.5
69.4
64.9
58.8
54.9
50.3
46.5
43.1
41.0
38.5
36.2
34.2
30.9
28.2
25.7
23.8
22.0
20.7
18.8
17.2
15.5
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
Vishay General Semiconductor
SMB10J40A
1CR
44.4
49.1
1.0
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(3)
All terms and symbols are consistent with ANSI/IEEE C62.35
(4)
V = 3.5 V at I = 50 A (uni-directional only)
F
F
Revision: 13-Mar-12
Document Number: 88422
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
BI-DIRECTIONAL
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
MAX.
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
MAXIMUM
REVERSE
LEAKAGE
AT V
WM (3)
I
D
(μA)
2000
2000
1000
400
200
100
40
20
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE SURGE
CURRENT
I
PPM (2)
(A)
87.0
77.7
71.4
66.7
62.0
58.8
55.6
51.9
47.1
44.0
40.2
37.2
34.5
32.8
30.8
29.0
27.4
24.7
22.5
20.6
19.0
17.6
16.5
15.0
13.8
12.4
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
Vishay General Semiconductor
SMB8J5.0CA
1AE
6.40
7.25
10
SMB8J6.0CA
1AG
6.67
7.37
10
SMB8J6.5CA
1AK
7.22
7.98
10
SMB8J7.0CA
1AM
7.78
8.60
10
SMB8J7.5CA
1AP
8.33
9.21
1.0
SMB8J8.0CA
1AR
8.89
9.83
1.0
SMB8J8.5CA
1AT
9.44
10.4
1.0
SMB8J9.0CA
1AV
10.0
11.1
1.0
SMB8J10CA
1AX
11.1
12.3
1.0
SMB8J11CA
1AZ
12.2
13.5
1.0
SMB8J12CA
1BE
13.3
14.7
1.0
SMB8J13CA
1BG
14.4
15.9
1.0
SMB8J14CA
1BK
15.6
17.2
1.0
SMB8J15CA
1BM
16.7
18.5
1.0
SMB8J16CA
1BP
17.8
19.7
1.0
SMB8J17CA
1BR
18.9
20.9
1.0
SMB8J18CA
1BT
20.0
22.1
1.0
SMB8J20CA
1BV
22.2
24.5
1.0
SMB8J22CA
1BX
24.4
26.9
1.0
SMB8J24CA
1BZ
26.7
29.5
1.0
SMB8J26CA
1CE
28.9
31.9
1.0
SMB8J28CA
1CG
31.1
34.4
1.0
SMB8J30CA
1CK
33.3
36.8
1.0
SMB8J33CA
1CM
36.7
40.6
1.0
SMB8J36CA
1CP
40.0
44.2
1.0
SMB8J40CA
1CR
44.4
49.1
1.0
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(3)
All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
(1)
Typical thermal resistance, junction to lead
(1)
SYMBOL
R
JA
R
JL
VALUE
72
20
UNIT
°C/ W
Note
Mounted on minimum recommended pad layout
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMB10J5.0A-E3/52
SMB10J5.0A-E3/5B
SMB10J5.0AHE3/52
(1)
SMB10J5.0AHE3/5B
(1)
(1)
UNIT WEIGHT (g)
0.106
0.106
0.106
0.106
PREFERRED PACKAGE CODE
52
5B
52
5B
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
Revision: 13-Mar-12
Document Number: 88422
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
10 000
P
PPM
- Peak Pulse Power (kW)
10
SMB10J5.0 -
SMB10J40A
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
1000
1
SMB8J5.0C -
SMB8J40CA
100 µs
1.0 ms
10 ms
100
V
R
, Measured at
Stand-Off
Voltage V
WM
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
10
100
200
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
Bi-Directional
10
1
t
d
- Pulse Width (s)
V
WM
- Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 -
Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
75
50
Transient Thermal Impedance (°C/W)
0
25
50
75
100
125
150
175
200
10
25
0
1.0
0.01
0.1
1
10
100
1000
T
J
- Initial Temperature (°C)
t
p
- Pulse Duration (s)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 -
Typical Transient Thermal Impedance
150
200
I
PPM
- Peak Pulse Current, % I
RSM
Peak Forward Surge Current (A)
t
r
= 10 µs
Peak Value
I
PPM
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where
the Peak Current
decays to 50 % of I
PPM
8.3
ms Single Half Sine-Wave
Uni-Directional Only
100
100
Half Value - I
PP
I
PPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
10
1
10
100
t - Time (ms)
Number
of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 -
Maximum Non-Repetitive Forward Surge Current
Revision: 13-Mar-12
Document Number: 88422
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB)
Cathode Band
0.085 (2.159)
MAX.
Vishay General Semiconductor
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.220 REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 13-Mar-12
Document Number: 88422
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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