INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
MJE53T
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 350V(Min)
APPLICATIONS
·Designed
for high voltage inverters, switching regulators
and line operated amplifier applications. Especially well
suited for switching power supply applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
450
350
6
5
10
2
80
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.56
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)
V
BE
(on)
I
CEO
I
CES
I
EBO
h
FE-1
h
FE-2
C
OB
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
CONDITIONS
I
C
= 25mA; I
B
= 0
I
C
= 5A; I
B
= 2A
B
MJE53T
MIN
350
TYP.
MAX
UNIT
V
2.0
2.0
1.0
1.0
1.0
30
5
150
V
V
mA
mA
mA
I
C
= 5A ; V
CE
= 10V
V
CE
= 250V; I
B
=0
V
CE
= 450V; V
BE
= 0
V
EB
= 5V; I
C
=0
I
C
= 0.3A ; V
CE
= 10V
I
C
= 5A ; V
CE
= 10V
I
E
= 0 ; V
CB
= 10V; f
test
=0.1MHz
pF
Switching times
t
on
t
off
Turn-On Time
Turn-Off Time
0.5
2.0
μs
μs
I
C
= 2.5A , I
B1
= -I
B2
= 0.5A
V
BE
(off)
= 5V; V
CC
= 125V
isc Website：www.iscsemi.cn
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