INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
MJ12022
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 450V(Min)
·Fast
Turn-Off Time
APPLICATIONS
·Designed
for high resolution video systems, such as : high
density graphic displays, data terminals, video scanners.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CEV
V
CEO(SUS)
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
850
450
6
15
20
10
15
175
200
-65~200
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)
V
BE
(sat)
I
CEV
I
CER
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
CONDITIONS
I
C
=100mA ; I
B
=0
I
C
= 10A; I
B
= 2A
I
C
= 10A; I
B
= 2A
V
CEV
=850V;V
BE
(off)
=1.5V
V
CEV
=850V;V
BE
(off)
=1.5V;T
C
=100℃
V
CE
= 850V; R
BE
= 50Ω,T
C
= 100℃
V
EB
= 6V; I
C
=0
I
C
= 15A ; V
CE
= 5V
I
C
= 1.3A; V
CE
= 10V; f
test
=1MHz
I
E
= 0; V
CB
= 10V; f
test
=1kHz
5
15
MIN
450
MJ12022
TYP.
MAX
UNIT
V
1.2
1.5
0.25
1.5
2.5
1.0
V
V
mA
mA
mA
MHz
400
pF
Switching times;Inductive Load
t
s
t
f
Storage Time
Fall Time
I
C
= 10A , V
CC
= 120V; I
B1
= 2A;
PW= 8μs; V
BE
(off)
= 4V
Duty Cycle≤2.0%
820
100
1800
300
ns
ns
isc Website：www.iscsemi.cn
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