INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
MJ11016
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 120V(Min.)
·High
DC Current Gain-
: h
FE
= 1000(Min.)@I
C
= 20A
·Low
Collector Saturation Voltage-
: V
CE (sat)
= 3.0V(Max.)@ I
C
= 20A
·Complement
to Type MJ11015
APPLICATIONS
·Designed
for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continunous
Base Current-Continunous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
120
120
5
30
1
200
200
-55~+200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
0.87
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MJ11016
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 0.1A; I
B
= 0
120
V
V
CE
(sat)-1
Collector-Emitter Saturation Voltage
I
C
= 20A; I
B
= 0.2A
3.0
V
V
CE
(sat)-2
Collector-Emitter Saturation Voltage
I
C
= 30A; I
B
= 0.3A
4.0
V
V
BE
(sat)-1
Base-Emitter Saturation Voltage
I
C
= 20A; I
B
= 0.2A
3.5
V
V
BE
(sat)-2
Base-Emitter Saturation Voltage
I
C
= 30A; I
B
= 0.3A
V
CE
=120V; R
BE
=1kΩ
V
CE
=120V; R
BE
=1kΩ; T
C
=150℃
V
CE
= 50V; I
B
= 0
5.0
1.0
5.0
1.0
V
I
CER
Collector Cutoff Current
mA
I
CEO
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
V
EB
= 5V; I
C
= 0
5.0
mA
h
FE-1
DC Current Gain
I
C
= 20A, V
CE
= 5V
1000
h
FE-2
DC Current Gain
I
C
= 30A, V
CE
= 5V
200
isc Website：www.iscsemi.cn
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