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HS3B

产品描述3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB
产品类别分立半导体    二极管   
文件大小82KB,共2页
制造商HY Electronic
官网地址http://www.hygroup.com.tw
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HS3B概述

3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB

HS3B规格参数

参数名称属性值
包装说明R-PDSO-C2
Reach Compliance Codeunknow
应用EFFICIENCY
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1 V
JESD-30 代码R-PDSO-C2
最大非重复峰值正向电流100 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流3 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
最大重复峰值反向电压100 V
最大反向电流5 µA
最大反向恢复时间0.05 µs
表面贴装YES
端子形式C BEND
端子位置DUAL
Base Number Matches1

文档预览

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HS3X / UF3X SERIES
SURFACE MOUNT
HIGH EFFICIENCY (ULTRA FAST)
GLASS PASSIVATED RECTIFIERS
FEATURES
Low cost
Diffused junction
Ultra fast switching for high efficiency
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT -
3.0
Amperes
SMC
.128(3.25)
.108(2.75)
.245(6.22)
.220(5.59)
.280(7.11)
.260(6.60)
.012(.305)
.006(.152)
.103(2.62)
.079(2.00)
.060(1.52)
.030(0.76)
.008(.203)
.002(.051)
MECHANICAL DATA
Case: Molded Plastic
Polarity:Color band denotes cathode
Weight: 0.007 ounces,0.21 grams
Mounting position: Any
.320(8.13)
.305(7.75)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
HS3A
UF3A
50
35
50
HS3B
UF3B
100
70
100
HS3D
UF3D
200
140
200
HS3G
UF3G
400
280
400
3.0
HS3J
UF3J
600
420
600
HS3K
UF3K
800
560
800
HS3M
UF3M
1000
700
1000
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25℃
@T
J
=100℃
@T
A
=55
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
UNIT
V
V
V
A
I
FSM
V
F
I
R
T
RR
C
J
R
θJA
T
J
T
STG
50
50
1.0
150
1.3
5.0
100
75
30
20
-55 to +150
-55 to +150
1.7
A
V
μA
nS
pF
℃/W
Maximum Reverse Recovery Time(Note 1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1.Measured with I
F
=0.5A,I
R
=1A
,I
RR
=0.25A
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
3.Thermal resistance junction to ambient
~ 114 ~

 
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