INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
BFS67
DESCRIPTION
·Low
Noise Figure
NF = 4.5 dB TYP. @V
CE
= 5 V, I
C
= 2 mA, f = 500 MHz
·High
Current-Gain—Bandwidth Product
fT= 1 GHz TYP. @V
CE
= 5 V, I
C
= 2 mA, f = 500 MHz
APPLICATIONS
·For
a wide range of RF applications such as: mixers and
oscillators in TV tuners and RF communications equipment.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
25
V
V
CEO
Collector-Emitter Voltage
15
V
V
EBO
Emitter-Base Voltage
2.5
V
I
C
Collector Current-Continuous
25
mA
I
CM
Collector Current-Peak
50
mA
P
C
Collector Power Dissipation
@T
C
=25℃
0.3
W
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-65~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BFS67
MAX
UNIT
I
CBO
Collector Cutoff Current
V
CB
= 10V; I
E
= 0
0.01
μA
h
FE-1
DC Current Gain
I
C
= 2mA ; V
CE
= 1V
25
h
FE-2
DC Current Gain
I
C
= 25mA ; V
CE
= 1V
25
f
T
Current-Gain—Bandwidth Product
I
C
= 2mA ; V
CE
= 5V; f= 500MHz
1
GHz
f
T
Current-Gain—Bandwidth Product
I
C
= 25mA ; V
CE
= 5V; f= 500MHz
1.6
GHz
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= 10V; f= 1MHz
0.8
1.5
pF
C
re
Feedback Capacitance
I
C
= 1mA ; V
CB
= 5V; f= 1MHz
I
C
= 2mA ; V
CE
= 5V;R
S
= 50Ω
f= 500MHz
0.65
pF
NF
Noise Figure
4.5
dB
isc Website：www.iscsemi.cn
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