INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
BFR540
DESCRIPTION
·High
Power Gain
·High
Current Gain Bandwidth Product
·Low
Noise Figure
APPLICATIONS
·Designed
for RF frontend in wideband applications in the
GHz range,such as analog and digital cellular telephones,
cordless telephones(CT1, CT2,DEC, etc.).
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
20
V
V
CES
Collector-Emitter Voltage
15
V
V
EBO
Emitter-Base Voltage
2.5
V
I
C
Collector Current-Continuous
120
mA
P
C
Collector Power Dissipation
@T
C
=25℃
0.5
W
T
J
Junction Temperature
175
℃
T
stg
Storage Temperature Range
-65~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BFR540
MAX
UNIT
I
CBO
Collector Cutoff Current
V
CB
= 8V; I
E
= 0
0.05
μA
h
FE
DC Current Gain
I
C
= 40mA ; V
CE
= 8V
60
250
f
T
Current-Gain—Bandwidth Product
I
C
= 40mA ; V
CE
= 8V; f= 1GHz
9
GHz
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= 8V; f= 1MHz
0.9
pF
C
re
Feedback Frequency
I
E
= 0 ; V
CB
= 8V; f= 1MHz
0.6
pF
PG
Power Gain
I
C
= 40mA ; V
CE
= 8V; f= 900MHz
14
dB
PG
Power Gain
I
C
= 40mA ; V
CE
= 8V; f= 2GHz
7
dB
︱
S
21e
︱
2
Insertion Power Gain
I
C
= 40mA ; V
CE
= 8V; f= 900MHz
12
13
dB
NF
Noise Figure
I
C
= 10mA ; V
CE
= 8V; f= 900MHz
1.3
1.8
dB
NF
Noise Figure
I
C
= 40mA ; V
CE
= 8V; f= 900MHz
1.9
2.4
dB
NF
Noise Figure
I
C
= 10mA ; V
CE
= 8V; f= 2GHz
I
C
= 40 mA; V
CE
= 8 V;
Z
L
= Z
S
= 75
Ω
2.1
dB
Vo
Output Voltage
550
mV
isc Website：www.iscsemi.cn
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