1N4934G: 产品描述1 A, 100 V, SILICON, SIGNAL DIODE, DO-41; 产品类别分立半导体二极管; 文件大小79KB，共2页; 制造商HY Electronic; 官网地址http://www.hygroup.com.tw

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1N4934G概述

1 A, 100 V, SILICON, SIGNAL DIODE, DO-41

1N4934G规格参数

参数名称	属性值
厂商名称	HY Electronic
包装说明	O-PALF-W2
Reach Compliance Code	unknown
ECCN代码	EAR99
Is Samacsys	N
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	DO-41
JESD-30 代码	O-PALF-W2
元件数量	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	1 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
最大重复峰值反向电压	100 V
最大反向恢复时间	0.2 µs
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL
Base Number Matches	1

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1N4933G thru 1N4937G

FAST RECOVERY

GLASS PASSIVATED RECTIFIERS

FEATURES

●

Fast switching for high efficiency

●

Low cost

●

Diffused junction

●

Low reverse leakage current

●

Low forward voltage drop

●

Highcurrent capability

●

The plastic material carries UL recognition 94V-0

REVERSE VOLTAGE

- 50

600

Volts

FORWARD CURRENT

- 1.0

Ampere

DO- 41

1.0(25.4)

MIN.

.034(0.9)

DIA

.028(0.7)

.205(5.2)

MAX

MECHANICAL DATA

●

Case: JEDEC DO-41 molded plastic

●

Polarity: Color band denotes cathode

●

Weight: 0.012 ounces , 0.34 grams

.107(2.7)

DIA

.080(2.0)

1.0(25.4)

MIN.

●Mounting

position: Any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward

Rectified Current

Peak Forward Surge Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load(JEDEC Method)

Peak Forward Voltage at 1.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

=25℃

=100℃

=75

℃

SYMBOL

RRM

RMS

(AV)

1N4933G

1N4934G

100

1N4935G

200

140

200

1.0

1N4936G

400

280

400

1N4937G

600

420

600

UNIT

FSM

θJA

STG

1.3

5.0

100

200

130

-55 to +150

μA

℃/W

℃

Maximum Reverse Recovery Time(Note 1)

Maximum Reverse Recovery Time(Note 2)

Typical Junction Capacitance (Note3)

Typical Thermal Resistance (Note4)

Operating Temperature Range

Storage Temperature Range

NOTES: 1.Measured with I

=1.0A,V

=30V,di/dt=50A/us.

2.Measured with I

=0.5A,I

=1A,I

=0.25A

3.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC

4.Thermal resistance junction to ambient .

~ 88 ~

1N4934G相似产品对比

	1N4934G	1N4933G	1N4935G	1N4936G
描述	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	SIGNAL DIODE	1 A, 200 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
厂商名称	HY Electronic	HY Electronic	HY Electronic	HY Electronic
包装说明	O-PALF-W2	O-PALF-W2	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	N	N	N
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95代码	DO-41	DO-41	DO-41	DO-41
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
元件数量	1	1	1	1
端子数量	2	2	2	2
最高工作温度	150 °C	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C
最大输出电流	1 A	1 A	1 A	1 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM
最大重复峰值反向电压	100 V	50 V	200 V	400 V
最大反向恢复时间	0.2 µs	0.2 µs	0.2 µs	0.2 µs
表面贴装	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL
Base Number Matches	1	1	1	1