电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

US1JE3

产品描述Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, CLIP SMA, 2 PIN
产品类别分立半导体    二极管   
文件大小289KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

US1JE3概述

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, CLIP SMA, 2 PIN

US1JE3规格参数

参数名称属性值
是否Rohs认证符合
包装说明ROHS COMPLIANT, PLASTIC, CLIP SMA, 2 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-214AC
JESD-30 代码R-PDSO-C2
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
最大重复峰值反向电压600 V
最大反向恢复时间0.075 µs
表面贴装YES
端子形式C BEND
端子位置DUAL
Base Number Matches1

文档预览

下载PDF文档
creat by ART
US1A - US1M
1.0AMP. High Efficient Surface Mount Rectifiers
SMA/DO-214AC
Features
Glass passivated chip junction
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Ultrafast recovery time for high efficiency
Low forward voltage, low power loss
High temperature soldering guaranteed:
260℃/10 seconds on terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: Molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Weight: 0.064 grams
Ordering Information (example)
Part No.
US1A
Package
SMA
Packing
1.8K / 7" REEL
Packing code
R3
Packing code
(Green)
R3G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@1A
Maximum Reverse Current @ Rated VR
T
A
=25
T
A
=125
Symbol US1A US1B US1D US1G
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
US1J
600
420
600
US1K US1M
800
560
800
1000
700
1000
Unit
V
V
V
A
A
50
35
50
100
70
100
200
140
200
400
280
400
1
30
1.0
5
150
50
15
75
27
- 55 to + 150
- 55 to + 150
1.7
V
uA
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
75
10
O
nS
pF
C/W
O
O
R
θjA
R
θjL
T
J
T
STG
C
C
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:I13

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 920  514  662  2184  677  24  51  25  9  50 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved