INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= 400V(Min)—MJ13070
= 450V(Min)—MJ13071
·High
Switching Speed
APPLICATIONS
·Designed
for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching
regulators
·Inverters
·Solenoid
and relay drivers
·Motor
controls
·Deflection
circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
MJ13070
V
CEV
Collector-Emitter Voltage
MJ13071
MJ13070
V
CEO(SUS)
Collector-Emitter Voltage
MJ13071
V
EBO
I
C
I
CM
I
B
B
MJ13070/13071
VALUE
650
UNIT
V
750
400
V
450
6
5
8
2
4
125
200
-65~200
V
A
A
A
A
W
℃
℃
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.4
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
MJ13070
I
C
=100mA ; I
B
=0
MJ13071
V
CE
(sat)-
1
V
CE
(sat)-
2
V
BE
(sat)
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
MJ13070
MJ13071
MJ13070
MJ13071
I
EBO
h
FE
C
OB
Emitter Cutoff Current
DC Current Gain
Output Capacitance
I
C
= 3A; I
B
= 0.6A
I
C
= 3A; I
B
= 0.6A;T
C
=100℃
B
B
MJ13070/13071
CONDITIONS
MIN
400
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
V
450
1.0
2.0
3.0
1.5
1.5
0.5
2.5
mA
0.5
2.5
3.0
mA
3.0
1.0
8
250
pF
mA
V
V
V
I
C
= 5A; I
B
= 1A
B
I
C
= 3A; I
B
= 0.6A
I
C
= 3A; I
B
= 0.6A;T
C
=100℃
B
B
I
CEV
Collector
Cutoff Current
V
CEV
=650V;V
BE
(off)
=1.5V
V
CEV
=650V;V
BE
(off)
=1.5V;T
C
=100℃
V
CEV
=750V;V
BE
(off)
=1.5V
V
CEV
=750V;V
BE
(off)
=1.5V;T
C
=100℃
V
CE
= 650V; R
BE
= 50Ω,T
C
= 100℃
V
CE
= 750V; R
BE
= 50Ω,T
C
= 100℃
V
EB
= 6V; I
C
=0
I
C
= 3A ; V
CE
= 5V
I
E
= 0; V
CB
= 10V; f
test
=1.0kHz
I
CER
Collector
Cutoff Current
Switching times;Resistive Load
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
I
C
= 3A , V
CC
= 250V;
I
B1
= 0.4A;t
p
= 30μs; V
BE
(off)
= 5V
Duty Cycle≤2.0%
30
100
400
175
50
400
1500
500
ns
ns
ns
ns
isc Website：www.iscsemi.cn
2
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
