Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220F package
・High
voltage ,high speed
APPLICATIONS
・Designed
for use in 220V line-operated
switchmode power supplies and electronic
light ballasts
PINNING
PIN
1
2
3
Base
Collector
DESCRIPTION
MJF18004
・
Fig.1 simplified outline (TO-220F) and symbol
Emitter
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
电半
固
Base current
Collector-emitter voltage
Emitter-base voltage
导½
CONDITIONS
Open emitter
ANG
CH
IN
Collector current (DC)
Collector current-Peak
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
MIC
E SE
Open base
Open collector
OR
CT
NDU
O
VALUE
1000
450
9
5
10
2
4
UNIT
V
V
V
A
A
A
A
W
℃
℃
T
C
=25℃
40
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
R
th j-A
PARAMETER
Thermal resistance junction to case
Thermal resistance junction to ambient
MAX
3.12
62.5
UNIT
℃/W
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BEsat-1
V
BEsat-2
V
BEsat-3
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
CONDITIONS
I
C
=0.1A; L=25mH
I
C
=1A ;I
B
=0.1A
T
C
=125℃
I
C
=2A ;I
B
=0.4A
T
C
=125℃
I
C
=2.5A ;I
B
=0.5A
I
C
=1A ;I
B
=0.1A
I
C
=2A ;I
B
=0.4A
I
C
=2.5A ;I
B
=0.5A
MIN
450
MJF18004
TYP.
MAX
UNIT
V
0.5
0.6
0.45
0.8
0.75
1.1
1.25
1.3
0.1
0.5
V
V
V
V
V
V
I
CES
Collector cut-off current
V
CES
=RatedV
CES;
V
EB
=0
T
C
=125℃
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
h
FE-4
f
T
C
OB
固电
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
DC current gain
Transition frequency
导½
半
V
CES
=800V
V
CE
=RatedV
CEO
; I
B
=0
V
EB
=9V; I
C
=0
HA
INC
ES
NG
I
C
=1A ; V
CE
=2.5V
I
C
=1A ; V
CE
=5V
I
C
=2A ; V
CE
=1V
I
C
=5mA ; V
CE
=5V
MIC
E
OR
CT
NDU
O
0.1
0.1
0.1
12
14
6
10
13
45
36
mA
mA
mA
I
C
=0.5A ; V
CE
=10V;f=1.0MHz
I
E
=0 ; V
CB
=10V;f=1.0MHz
MHz
pF
Collector outoput capacitance
Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
V
CC
=250V ,I
C
=2.5A
I
B1
=0.5A; I
B2
=0.5A
0.6
3.0
0.4
μs
μs
μs
2
嵌入式系统
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