Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-126 package
・High
voltage ,high speed
APPLICATIONS
・Particularly
suited for 115V and 220V
switchmode applications such as switching
regulators,inverters ,motor controls,solenoid/
relay drivers and deflection circuits.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
MJE13002
・
Absolute maximum ratings (Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
T
j
T
stg
固电
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
导½
半
PARAMETER
CONDITIONS
CH
IN
Base current
Emitter current
Collector current (DC)
ANG
MIC
E SE
Open emitter
Open base
Open collector
OR
CT
NDU
O
VALUE
600
300
9
1.5
3
0.75
1.5
2.25
4.5
UNIT
V
V
V
A
A
A
A
A
A
W
℃
℃
Collector current-Peak
Base current-Peak
Emitter current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
40
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
MAX
3.12
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unles otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BEsat-1
V
BEsat-2
I
CEV
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA ;I
B
=0
I
C
=0.5A; I
B
=0.1A
I
C
=1A; I
B
=0.25A
T
C
=100℃
I
C
=1.5A;I
B
=0.5A
I
C
=0.5A; I
B
=0.1A
I
C
=1A; I
B
=0.25A
T
C
=100℃
V
CEV
=Rated value; V
BE (off)
=1.5V
T
C
=100℃
V
EB
=9V; I
C
=0
I
C
=0.5A ; V
CE
=2V
MIN
300
MJE13002
TYP.
MAX
UNIT
V
0.5
1.0
1.0
3.0
1.0
1.2
1.1
1.0
5.0
1.0
40
V
V
V
V
V
mA
mA
固电
DC current gain
导½
半
Switching times resistive load
t
d
t
r
t
s
t
f
Delay time
Rise time
Storage time
Fall time
ANG
CH
IN
Transition frequency
Collector outoput capacitance
MIC
E SE
I
C
=1A ; V
CE
=2V
OR
CT
NDU
O
8
5
25
4
21
I
C
=0.1A ; V
CE
=10V;f=1MHz
I
E
=0;f=0.1MHz ; V
CB
=10V
MHz
pF
0.05
V
CC
=125V ,I
C
=1A
I
B1
=-I
B2
=0.2A
t
p
=25μs
duty cycle≤1%
0.5
2.0
0.4
0.1
1.0
4.0
0.7
μs
μs
μs
μs
2
PCB设计
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