INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
MJ413
DESCRIPTION
·High
Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= 325V(Min.)
·DC
Current Gain-
: h
FE
= 20-80@ I
C
= 0.5A
APPLICATIONS
·Designed
for medium to high voltage inverters, converters,
regulators and switching circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEX
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
400
400
5
10
2
125
150
-65~200
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
R
th j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MJ413
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA; I
B
= 0
325
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 0.5A; I
B
= 50mA
0.8
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 0.5A; I
B
= 50mA
V
CE
= 400V;V
EB(off)
=1.5V
V
CE
= 400V;V
EB(off)
=1.5V;T
C
=125℃
V
EB
= 5V; I
C
= 0
1.25
0.25
0.5
5.0
V
I
CEX
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff current
mA
h
FE-1
DC Current Gain
I
C
= 0.5A; V
CE
=5V
20
80
h
FE-2
DC Current Gain
I
C
= 1A; V
CE
=5V
15
f
T
Current-Gain—Bandwidth Product
I
C
= 0.2A; V
CE
=10V; f=1.0MHz
2.5
MHz
isc Website：www.iscsemi.cn
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