Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
MJ15027
DESCRIPTION
・With
TO-3 package
・Complement
to type MJ15026
・Excellent
safe operating area
APPLICATIONS
・For
high power audio ,stepping
motor and other linear applications
・Relay
or solenoid drviers
・DC-DC
converters inverters
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
固电
导½
半
ANG
Fig.1 simplified outline (TO-3) and symbol
CH
IN
Base current
Collector-base voltage
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
-200
-200
-7
-15
-7
UNIT
V
V
V
A
A
W
℃
℃
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
250
175
-65~175
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
0.98
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-50mA ;I
B
=0
I
E
=-1mA ;I
C
=0
I
C
=-10A; I
B
=-1A
I
C
=-5A ; V
CE
=-5V
V
CB
=-200V; I
E
=0
V
EB
=-7V; I
C
=0
I
C
=-5A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-12V
25
15
MIN
-200
-7
MJ15027
TYP.
MAX
UNIT
V
V
-2.0
-1.5
-0.1
-0.1
150
V
V
mA
mA
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
MHz
2
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