Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ15015
DESCRIPTION
・With
TO-3 package
・Complement
to type MJ15016
・Excellent
safe operating area
APPLICATIONS
・For
high power audio ,stepping
motor and other linear applications
・Relay
or solenoid drviers
・DC-DC
converters inverters
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
固电
导½
半
ANG
H
Fig.1 simplified outline (TO-3) and symbol
INC
Collector-base voltage
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
200
120
7
15
7
UNIT
V
V
V
A
A
W
℃
℃
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
180
150
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
0.98
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(SUS)CEO
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BE
I
CEO
I
CEV
I
EBO
h
FE-1
h
FE-2
h
FE-3
I
s/b
C
OB
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=4A; I
B
=0.4A
I
C
=10A; I
B
=3.3A
I
C
=15A; I
B
=7.0A
I
C
=4A ; V
CE
=4V
V
CE
=60V; V
BE(off)
=0
V
CE
=Rated Value; V
BE(off)
=1.5V
T
C
=150℃
V
EB
=7V; I
C
=0
I
C
=4A ; V
CE
=2V
I
C
=4A ; V
CE
=4V
10
20
5
MIN
120
TYP.
MJ15015
MAX
UNIT
V
1.1
3.0
5.0
1.8
0.1
1.0
6.0
0.2
V
V
V
V
mA
mA
mA
电半
固
DC current gain
DC current gain
导½
ANG
CH
IN
Output capacitance
Transition frequency
Second breakdown collector current
With base forward biased
MIC
E SE
I
C
=10A ; V
CE
=4V
V
CE
=60Vdc,t=0.5 s,
Nonrepetitive
OR
CT
NDU
O
70
70
3.0
60
0.8
600
A
pF
MHz
I
E
=0 ; V
CB
=10V;f=1.0MHz
I
C
=1A ; V
CE
=4V;f=1.0MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJ15015
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ15015
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
4
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
