Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Complement
to type MJ15023; MJ15025
・Excellent
safe operating area
・High
DC current gain
h
FE
= 15 (Min) @ I
C
= 8 Adc
APPLICATIONS
・Designed
for high power audio, disk head
positioners and other linear applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
MJ15022 MJ15024
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
固电
导½
半
PARAMETER
Collector-base voltage
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
INC
Collector-emitter voltage
ANG
H
MJ15022
MJ15024
MJ15022
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
350
400
200
250
5
16
30
5
UNIT
V
V
V
A
A
A
W
℃
℃
MJ15024
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
250
150
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
0.70
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
MJ15022
I
C
=0.1A ;I
B
=0
MJ15024
V
CEsat-1
V
CEsat-2
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
MJ15022
MJ15024
MJ15022
MJ15024
I
C
=8A; I
B
=0.8A
I
C
=16A; I
B
=3.2A
I
C
=8A ; V
CE
=4V
V
CE
=150V; I
B
=0
CONDITIONS
MJ15022 MJ15024
MIN
200
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
250
1.4
4.0
2.2
V
V
V
I
CEO
Collector
cut-off current
0.5
V
CE
=200V; I
B
=0
V
CE
=200V; V
BE(off)
=1.5V
V
CE
=250V; V
BE(off)
=1.5V
V
EB
=5V; I
C
=0
mA
I
CEX
Collector
cut-off current
I
EBO
h
FE-1
h
FE-2
I
s/b
C
OB
f
T
固电
Emitter cut-off current
DC current gain
DC current gain
导½
半
HA
INC
Output capacitance
Transition frequency
Second breakdown collector
current with base forward biased
ES
NG
I
C
=8A ; V
CE
=4V
I
C
=16A ; V
CE
=4V
MIC
E
OR
CT
NDU
O
0.5
60
15
5
5.0
2.0
500
4
0.25
mA
mA
V
CE
=50Vdc,t=0.5 s,
V
CE
=80Vdc,t=0.5 s,Nonrepetitive
I
E
=0 ; V
CB
=10V;f=1.0MHz
A
pF
MHz
I
C
=1A ; V
CE
=10V;f=1.0MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJ15022 MJ15024
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ15022 MJ15024
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
4
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