Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
MJ15002
DESCRIPTION
・With
TO-3 package
・Complement
to type MJ15001
・Excellent
safe operating area
APPLICATIONS
・For
high power audio,disk head positioners
and other linear applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
I
E
P
D
T
j
T
stg
PARAMETER
固电
Collector-base voltage
导½
半
ANG
H
CONDITIONS
Collector-emitter voltage
Emitter-base voltage
Collector current
INC
MIC
E SE
Open emitter
Open base
Open collector
OR
CT
NDU
O
VALUE
-140
-140
-5
-15
-5
20
UNIT
V
V
V
A
A
A
W
℃
℃
Base current
Emitter current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
250
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
0.875
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MJ15002
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=-0.2A ;I
B
=0
-140
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-4A; I
B
=-0.4A
-1.0
V
V
BE
Base-emitter on voltage
I
C
=-4A ; V
CE
=-2V
-2.0
V
I
CEO
Collector cut-off current
V
CE
=-140V; I
B
=0
V
CE
=-140V; V
BE(off)
=-1.5V
T
C
=150℃
V
EB
=-5V; I
C
=0
-0.25
-0.1
-2.0
-0.1
mA
I
CEX
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE
DC current gain
I
C
=-4A ; V
CE
=-2V
I
s/b
固电
Second breakdown collector current
With base forward biased
导½
半
C
OB
f
T
ANG
CH
IN
Output capacitance
Transition frequency
MIC
E SE
V
CE
=-40Vdc,t=1 s, Nonrepetitive
V
CE
=-100Vdc,t=1 s, Nonrepetitive
OR
CT
NDU
O
25
150
-5
-0.5
1000
2
A
I
E
=0 ; V
CB
=-10V;f=1.0MHz
pF
I
C
=-0.5A ; V
CE
=-10V;f=0.5MHz
MHz
2