INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
BFS520
DESCRIPTION
·Low
Noise Figure
NF = 1.1 dB TYP. @V
CE
= 6 V, I
C
= 5 mA, f = 900 MHz
·High
Current-Gain—Bandwidth Product
fT= 9 GHz TYP. @V
CE
= 6 V, I
C
= 20 mA, f = 1 GHz
APPLICATIONS
·Designed
for wideband applications such as satellite TV
tuners,cellular phones, cordless phones,pagers etc, with
signal frequencies up to 2 GHz.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
20
V
V
CES
Collector-Emitter Voltage
R
BE
= 0
15
V
V
EBO
Emitter-Base Voltage
2.5
V
I
C
Collector Current-Continuous
70
mA
P
C
Collector Power Dissipation
@T
C
=25℃
0.3
W
T
J
Junction Temperature
175
℃
T
stg
Storage Temperature Range
-65~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BFS520
MAX
UNIT
I
CBO
Collector Cutoff Current
V
CB
= 6V; I
E
= 0
0.05
μA
h
FE
DC Current Gain
I
C
= 20mA ; V
CE
= 6V
60
250
f
T
Current-Gain—Bandwidth Product
I
C
= 20mA ; V
CE
= 6V; f= 1GHz
9
GHz
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= 6V; f= 1MHz
0.5
pF
C
re
Feedback Capacitance
I
C
= 0 ; V
CB
= 6V; f= 1MHz
0.4
pF
︱
S
21e
︱
2
Insertion Power Gain
I
C
= 20mA ; V
CE
= 6V; f= 900MHz
13
14
dB
NF
Noise Figure
I
C
= 5mA ; V
CE
= 6V; f= 900MHz
1.1
1.6
dB
NF
Noise Figure
I
C
= 20mA ; V
CE
= 6V; f= 900MHz
1.6
2.1
dB
NF
Noise Figure
I
C
= 5mA ; V
CE
= 6V; f= 2GHz
1.9
dB
isc Website：www.iscsemi.cn
2
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
