INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
BFQ540
DESCRIPTION
·High
Gain
·High
Output Voltage
·Low
Noise
APPLICATIONS
·Designed
for use in VHF, UHF and CATV amplifiers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
20
V
V
CES
Collector-Emitter Voltage
15
V
V
EBO
Emitter-Base Voltage
2
V
I
C
Collector Current-Continuous
120
mA
P
C
Collector Power Dissipation
@T
C
=25℃
1.2
W
T
J
Junction Temperature
175
℃
T
stg
Storage Temperature Range
-65~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BFQ540
TYP.
MAX
UNIT
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
C
= 40μA ; R
BE
= 0
15
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10μA ; I
E
= 0
20
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100μA ; I
C
= 0
2
V
I
CBO
Collector Cutoff Current
V
CB
= 8V; I
E
= 0
0.05
μA
I
EBO
Emitter Cutoff Current
V
EB
= 1V; I
C
= 0
0.2
μA
h
FE
DC Current Gain
I
C
= 40mA ; V
CE
= 8V
60
250
f
T
Current-Gain—Bandwidth Product
I
C
= 40mA ; V
CE
= 8V; f= 1GHz
9
GHz
C
re
︱
S
21e
︱
2
Feedback Capacitance
I
E
= 0 ; V
CB
= 8V; f= 1MHz
0.9
pF
Insertion Power Gain
I
C
= 40mA ; V
CE
= 8V; f= 900MHz
12
13
dB
NF
Noise Figure
I
C
= 40mA ; V
CE
= 8V; f= 900MHz
1.9
2.4
dB
isc Website：www.iscsemi.cn
2
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
BFQ540
isc Website：www.iscsemi.cn
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
