SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4853, Rev. B
MURC105-MURC160
MURC105-MURC160
Ultrafast Silicon Die
Applications:
Switching Power Supply
General Purpose
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Glass-Passivated
Epitaxial Construction.
Low Reverse Leakage Current
High Surge Current Capability
Low Forward Voltage Drop
Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Rectified Forward
Current(Square Wave
Mounting Method #3 Per
Note1)
Max. Peak One Cycle Non-
Repetitive Surge Current
8.3 ms, half Sine pulse
Operating Junction
Temperature and Storage
Temperature
Symbol
V
RWM
I
F(AV)
MURC
105
50
MURC
110
100
MURC
115
150
MURC
120
200
MURC
130
300
MURC
140
400
MURC
150
500
MURC
160
600
Unit
V
A
1.0 @ T
A
= 130C
1.0 @ T
A
= 120C
I
FSM
35
A
T
J,
T
stg
-65 to +175
C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(Note1)
Symbol
V
F
MURC
105
MURC
110
MURC
115
MURC
120
MURC
130
MURC
140
MURC
150
MURC
160
Unit
V
(I
F
= 1.0 Amp, T
J
= 150
C)
(I
F
= 1.0 Amp, T
J
= 25
C)
Max. Reverse Current (Note1)
(Rated DC Voltage, T
J
= 150
C)
(Rated DC Voltage, T
J
= 25
C)
Max Reverse Recovery Time
(I
F
= 1.0 Amp, di/dt = 50 A/s)
(I
F
= 0.5 Amp, I
R
= 1.0 A,
I
REC
=0.25A)
0.710
0.875
I
R
50
2.0
t
rr
35
25
30
1.05
1.25
A
150
5.0
nS
75
50
10
pF
Max. Junction Capacitance
C
T
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz, V
SIG
= 50mV (p-p)
Max Forward Recovery Time
T
fr
(I
F
= 1.0 Amp, di/dt = 50 A/s,
I
REC
to 1.0V)
1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2%
25
50
nS
©2014 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
http://www.sensitron.com
sales@sensitron.com
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4853, Rev. B
MURC105-MURC160
Dimensions in inches (mm)
ANODE
B A
Top side metalization - Aluminum - 25 kÅ
minimum.
Bottom side metalization - Titanium 1.2 kÅ,
Nickel 1.8 kÅ, Silver - 30 kÅ minimum
Bottom side is cathode, top side is anode.
See part ordering information for different options
Anode
C
Cathode
Die type
(1)
Area (mil )
34 x 34
2
Si p-n die
Dimension A
Inch (millimeter)
0.034 (0.864)
(1)
Dimension B
Inch (millimeter)
0.020 (0.508)
(1)
Dimension C
Inch (millimeter)
0.009 (0.229)
(2)
Tolerance is ± 0.003” (0.076 mm)
(2)
Tolerance is ± 0.001” (0.025 mm)
©2014 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
http://www.sensitron.com
sales@sensitron.com
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4853, Rev. B
MURC105-MURC160
MURC105, MURC110, MURC115, MURC120
©2014 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
http://www.sensitron.com
sales@sensitron.com
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4853, Rev. B
MURC130, MURC140, MURC150, MURC160
MURC105-MURC160
©2014 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
http://www.sensitron.com
sales@sensitron.com
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4853, Rev. B
MURC105-MURC160
PART ORDERING INFORMATION
Default part number is Al top, Ag bottom.
Add the following suffix for these metal combinations:
Top
Bottom
Part Number
Al
Ag
MURC105
AG
Al
Au
MURC105AG
BB
Ag
Ag
MURC105BB
BG
Ag
Au
MURC105BG
GG
Au
Au
MURC105GG
GB
Au
Ag
MURC105GB
-R
- Reverse polarity -
MURC105-R
A = Ti (0.3 kA) / Al (25 kA)
B = Ti (1.2 kA) / Ni (1.8 kA) / Ag (30kA)
G = Ti (1.2 kA) / Ni (1.8 kA) / Au (12kA)
(TOP)
/ Ti (1.2 kA) / Ni (1.8 kA) / Au (4kA)
(BOTTOM)
Suffix
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
©2014 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
http://www.sensitron.com
sales@sensitron.com
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