SKP10N60
SKB10N60, SKW10N60
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
•
75% lower
E
off
compared to previous generation combined with
low conduction losses
•
Short circuit withstand time – 10
µs
•
Designed for:
- Motor controls
- Inverter
•
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
•
Very soft, fast recovery anti-parallel EmCon diode
C
G
E
Type
SKP10N60
SKB10N60
SKW10N60
Maximum Ratings
Parameter
V
CE
600V
I
C
10A
V
CE(sat)
2.2V
T
j
150°C
Package
TO-220AB
TO-263AB
TO-247AC
Ordering Code
Q67040-S4217
Q67040-S4218
Q67040-S4241
Symbol
V
CE
I
C
Value
600
21
10.9
Unit
V
A
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
1)
I
Cpul s
-
I
F
42
42
21
10
I
Fpul s
V
GE
t
SC
P
tot
T
j
,
T
stg
42
±20
10
104
-55...+150
V
µs
W
°C
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Mar-00
SKP10N60
SKB10N60, SKW10N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
Symbol
Conditions
Max. Value
Unit
R
thJC
R
thJCD
R
thJA
R
thJA
TO-220AB
TO-247AC
TO-263AB
1.2
2.4
62
40
40
K/W
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 5 00
µA
V
CE(sat)
V
G E
= 15 V ,
I
C
= 10 A
T
j
=2 5
°C
T
j
=1 5 0° C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 1 0 A
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 30 0
µA
,
V
C E
=
V
G E
V
C E
= 60 0 V,
V
G E
= 0 V
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
Symbol
Conditions
Value
min.
600
1.7
-
1.2
-
3
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
2
2.2
1.4
1.25
4
-
-
-
6.7
580
70
50
64
7
13
100
max.
-
2.4
2.7
1.8
1.65
5
Unit
V
µA
40
1500
100
-
696
84
60
83
-
-
-
A
nC
nH
nA
S
pF
I
GES
g
fs
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 10 A
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 48 0 V,
I
C
=1 0 A
V
G E
= 15 V
T O - 22 0A B
T O - 24 7A C
V
G E
= 15 V ,t
S C
≤
10
µs
V
C C
≤
6 0 0 V,
T
j
≤
15 0° C
2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Mar-00
1)
SKP10N60
SKB10N60, SKW10N60
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
°C
,
V
R
= 2 00 V ,
I
F
= 1 0 A,
d i
F
/ d t
=2 0 0 A/
µs
-
-
-
-
-
-
220
20
200
310
4.5
180
-
-
-
-
-
-
nC
A
A/µs
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
°C
,
V
C C
= 40 0 V,
I
C
= 1 0 A,
V
G E
= 0/ 15 V ,
R
G
= 25
Ω,
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
29
21
233
49
0.20
0.17
0.370
35
25
280
59
0.230
0.221
0.451
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Q
rr
I
rrm
d i
r r
/d t
T
j
=1 5 0° C
V
R
= 2 00 V ,
I
F
= 1 0 A,
d i
F
/ d t
=2 0 0 A/
µs
-
-
-
-
-
-
350
36
314
690
6.3
200
-
-
-
-
-
-
nC
A
A/µs
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0° C
V
C C
= 40 0 V,
I
C
= 1 0 A,
V
G E
= 0/ 15 V ,
R
G
= 25
Ω
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
29
21
266
63
0.297
0.28
0.577
35
25
319
76
0.342
0.364
0.706
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
3
Mar-00
SKP10N60
SKB10N60, SKW10N60
50A
I
c
t
p
=5
µ
s
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
40A
10A
15
µ
s
30A
50
µ
s
T
C
=80°C
20A
T
C
=110°C
10A
200
µ
s
1A
1ms
I
c
DC
0.1A
0A
10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 25Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤
150°C)
120W
25A
100W
20A
80W
I
C
,
COLLECTOR CURRENT
P
tot
,
POWER DISSIPATION
15A
60W
10A
40W
20W
5A
0W
25°C
50°C
75°C
100°C
125°C
0A
25°C
50°C
75°C
100°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
4
Mar-00
SKP10N60
SKB10N60, SKW10N60
35A
30A
25A
V
GE
=20V
20A
15A
10A
5A
0A
0V
15V
13V
11V
9V
7V
5V
35A
30A
25A
V
GE
=20V
20A
15A
10A
5A
0A
0V
15V
13V
11V
9V
7V
5V
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
1V
2V
3V
4V
5V
1V
2V
3V
4V
5V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T
j
= 150°C)
30A
25A
20A
15A
10A
5A
0A
0V
T
j
=+25°C
-55°C
+150°C
V
CE(sat)
,
COLLECTOR
-
EMITTER SATURATION VOLTAGE
35A
4.0V
3.5V
I
C
= 20A
3.0V
I
C
,
COLLECTOR CURRENT
2.5V
I
C
= 10A
2.0V
1.5V
2V
4V
6V
8V
10V
1.0V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V
CE
= 10V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
5
Mar-00
stm32/stm8
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