INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
BFQ591
DESCRIPTION
·High
Power Gain
·High
Current Gain Bandwidth Product
·Low
Noise Figure
APPLICATIONS
·Designed
for use in MATV or CATV amplifiers and RF
communications subscribers equipment.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
20
V
V
CEO
Collector-Emitter Voltage
15
V
V
EBO
Emitter-Base Voltage
3
V
I
C
Collector Current-Continuous
200
mA
P
C
Collector Power Dissipation
@T
C
=25℃
2.25
W
T
J
Junction Temperature
175
℃
T
stg
Storage Temperature Range
-65~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
f
T
PG
PG
C
re
︱
S
21e
︱
2
V
O
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Current-Gain—Bandwidth Product
Power Gain
Power Gain
Feedback Capacitance
Insertion Power Gain
Output Voltage
CONDITIONS
I
C
= 0.1mA ; I
B
= 0
I
C
= 0.1m A ; I
E
= 0
I
E
= 0.1m A ; I
C
= 0
V
CB
= 10V; I
E
= 0
I
C
= 70mA ; V
CE
= 8V
I
C
= 70mA ; V
CE
= 12V; f= 1GHz
I
C
= 70mA;V
CE
= 12V; f= 900MHz
I
C
= 70mA;V
CE
= 12V; f= 2GHz
I
E
= 0 ; V
CB
= 12V; f= 1MHz
I
C
= 70mA ; V
CE
= 12V; f= 1GHz
note
60
7
11
5.5
0.8
10
MIN
15
20
3
BFQ591
TYP.
MAX
UNIT
V
V
V
0.1
250
μA
GHz
dB
dB
pF
dB
mV
700
Note:
d
im
= 60 dB (DIN45004B); V
p
= V
o
; V
q
= V
o
−6
dB; f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 803.25 MHz;
measured @ f
(p+q+r)
= 793.25 MHz.
isc Website
：
www.iscsemi.cn
2
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
BFQ591
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
BFQ591
isc Website：www.iscsemi.cn
4
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