IS61LPD25632T/D/J
IS61LPD25636T/D/J
IS61LPD51218T/D/J
256K x 32, 256K x 36, 512K x 18
SYNCHRONOUS PIPELINED,
DOUBLE-CYCLE DESELECT STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Linear burst sequence control using MODE
input
• Three chip enable option for simple depth
expansion and address pipelining
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP and
119-pin PBGA package
• Power Supply
+3.3V V
DD
+3.3V or 2.5 V
DDQ
(I/O)
• Auto Power-down during deselect
• Double cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• T Version (three chips selects)
• D Version (two chips selects)
• J Version (PBGA Package with JTAG)
ISSI
APRIL 2003
®
DESCRIPTION
The
ISSI
IS61LPD25632T/D/J, IS61LPD25636T/D/J, and
IS61LPD51218T/D/J are high-speed, low-power synchro-
nous static RAMs designed to provide burstable, high-
performance memory for communication and networking
applications. The IS61LPD25632T/D/J is organized as
262,144 words by 32 bits and the IS61LPD25636T/D/J is
organized as 262,144 words by 36 bits. The IS61LPD51218T/
D/J is organized as 524,288 words by 18 bits. Fabricated
with
ISSI
's advanced CMOS technology, the device inte-
grates a 2-bit burst counter, high-speed SRAM core, and
high-drive capability outputs into a single monolithic circuit.
All synchronous inputs pass through registers controlled by
a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be one to four
bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write enable
(BWE). Input combined with one or more individual byte
write signals (BWx). In addition, Global Write (GW) is
available for writing all bytes at one time, regardless of the
byte write controls.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the
ADV
(burst address ad-
vance) input pin.
The mode pin is used to select the burst sequence order.
Linear burst is achieved when this pin is tied LOW. Inter-
leave burst is achieved when this pin is tied HIGH or left
floating.
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
-250
2.6
4
250
-225
2.8
4.4
225
-200
3.1
5
200
-166
3.5
6
166
Units
ns
ns
MHz
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/01/03
1
®
IS61LPD25632T/D/J, IS61LPD25636T/D/J, IS61LPD51218T/D/J
PIN CONFIGURATION
119-pin PBGA (D Version)
(Top View)
1
A
V
DDQ
B
NC
C
NC
D
DQc
E
DQc
F
V
DDQ
G
DQc
H
DQc
J
V
DDQ
K
DQd
L
DQd
M
V
DDQ
N
DQd
P
DQd
R
NC
T
NC
U
V
DDQ
NC
NC
NC
NC
NC
V
DDQ
NC
A
A
A
NC
ZZ
A
MODE
V
DD
NC
A
NC
NC
GND
A0
GND
NC
DQa
DQd
GND
A1
GND
DQa
DQa
DQd
GND
DQd
DQd
GND
BWd
CLK
NC
BWE
GND
BWa
GND
DQa
DQa
DQa
DQa
DQa
V
DDQ
V
DD
NC
V
DD
NC
V
DD
V
DDQ
DQc
GND
DQc
DQc
GND
BWc
DQc
GND
NC
GND
NC
CE
OE
ADV
GW
GND
GND
GND
BWb
GND
NC
DQb
DQb
DQb
DQb
DQb
DQb
V
DDQ
DQb
DQb
A
A
V
DD
A
A
NC
CE2
A
A
A
2
3
4
5
6
7
ISSI
ADSP
ADSC
A
A
A
A
V
DDQ
NC
256K x 32
PIN DESCRIPTIONS
A0, A1
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
Synchronous Address Inputs
Synchronous Clock
Synchronous Processor Address
Status
Synchronous Controller Address
Status
Synchronous Burst Address Advance
Individual Byte Write Enable
Synchronous Byte Write Enable
GW
CE,
CE2,
CE2
OE
DQa-DQd
MODE
V
DD
GND
V
DDQ
ZZ
DQPa-DQPd
Synchronous Global Write Enable
Synchronous Chip Enable
Output Enable
Synchronous Data Input/Output
Burst Sequence Mode Selection
+3.3V Power Supply
Ground
Isolated Output Buffer Supply:
+3.3V or 2.5V
Snooze Enable
Parity Data I/O
A
CLK
ADSP
ADSC
ADV
BWa-BWd
BWE
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
04/01/03
3
®
IS61LPD25632T/D/J, IS61LPD25636T/D/J, IS61LPD51218T/D/J
PIN CONFIGURATION
100-Pin TQFP (D Version)
A
A
CE
CE2
BWd
BWc
BWb
BWa
A
V
DD
GND
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
ISSI
100-Pin TQFP (T Version)
A
A
CE
CE2
BWd
BWc
BWb
BWa
CE2
V
DD
GND
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
NC
DQb
DQb
V
DDQ
GND
DQb
DQb
DQb
DQb
GND
V
DDQ
DQb
DQb
GND
NC
V
DD
ZZ
DQa
DQa
V
DDQ
GND
DQa
DQa
DQa
DQa
GND
V
DDQ
DQa
DQa
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
68
13
67
14
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
DQc
DQc
V
DDQ
GND
DQc
DQc
DQc
DQc
GND
V
DDQ
DQc
DQc
NC
V
DD
NC
GND
DQd
DQd
V
DDQ
GND
DQd
DQd
DQd
DQd
GND
V
DDQ
DQd
DQd
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
MODE
A
A
A
A
A1
A0
NC
NC
GND
V
DD
NC
NC
A
A
A
A
A
A
A
NC
DQc
DQc
V
DDQ
GND
DQc
DQc
DQc
DQc
GND
V
DDQ
DQc
DQc
NC
V
DD
NC
GND
DQd
DQd
V
DDQ
GND
DQd
DQd
DQd
DQd
GND
V
DDQ
DQd
DQd
NC
NC
DQb
DQb
V
DDQ
GND
DQb
DQb
DQb
DQb
GND
V
DDQ
DQb
DQb
GND
NC
V
DD
ZZ
DQa
DQa
V
DDQ
GND
DQa
DQa
DQa
DQa
GND
V
DDQ
DQa
DQa
NC
256K x 32
PIN DESCRIPTIONS
A0, A1
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
Synchronous Address Inputs
Synchronous Clock
Synchronous Processor Address
Status
Synchronous Controller Address
Status
Synchronous Burst Address Advance
Individual Byte Write Enable
Synchronous Byte Write Enable
GW
CE,
CE2,
CE2
OE
DQa-DQd
MODE
V
DD
GND
V
DDQ
ZZ
DQPa-DQPd
Synchronous Global Write Enable
Synchronous Chip Enable
Output Enable
Synchronous Data Input/Output
Burst Sequence Mode Selection
+3.3V Power Supply
Ground
Isolated Output Buffer Supply:
+3.3V or 2.5V
Snooze Enable
Parity Data I/O
A
CLK
ADSP
ADSC
ADV
BWa-BWd
BWE
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
04/01/03
MODE
A
A
A
A
A1
A0
NC
NC
GND
V
DD
NC
A
A
A
A
A
A
A
A
®
IS61LPD25632T/D/J, IS61LPD25636T/D/J, IS61LPD51218T/D/J
PIN CONFIGURATION
119-pin PBGA (D Version)
(Top View)
1
A
V
DDQ
B
NC
C
NC
D
DQc
E
DQc
F
V
DDQ
G
DQc
H
DQc
J
V
DDQ
K
DQd
L
DQd
M
V
DDQ
N
DQd
P
DQd
R
NC
T
NC
U
V
DDQ
NC
NC
NC
NC
NC
V
DDQ
NC
A
A
A
NC
ZZ
A
MODE
V
DD
NC
A
NC
DQPd
GND
A0
GND
DQPa
DQa
DQd
GND
A1
GND
DQa
DQa
DQd
GND
DQd
DQd
GND
BWd
CLK
NC
BWE
GND
BWa
GND
DQa
DQa
DQa
DQa
L
ISSI
4
5
6
7
119-pin PBGA (J Version)
(Top View)
7
A
1
2
3
2
3
4
5
6
A
CE2
A
DQPc
DQc
DQc
DQc
DQc
V
DD
A
A
A
GND
GND
GND
BWc
GND
NC
ADSP
ADSC
V
DD
NC
CE
OE
ADV
GW
V
DD
A
A
A
GND
GND
GND
BWb
GND
NC
A
A
A
DQPb
DQb
DQb
DQb
DQb
V
DD
V
DDQ
B
V
DDQ
NC
C
NC
D
DQc
E
DQc
F
V
DDQ
G
DQc
H
DQc
J
V
DDQ
K
DQd
DQd
M
V
DDQ
N
DQd
P
DQd
R
NC
T
NC
U
V
DDQ
A
CE2
A
DQPc
DQc
DQc
DQc
DQc
V
DD
DQd
DQd
DQd
DQd
DQPd
A
NC
TMS
A
A
A
GND
GND
GND
BWc
GND
NC
GND
BWd
GND
GND
GND
MODE
A
TDI
ADSP
ADSC
V
DD
NC
CE
OE
ADV
GW
V
DD
CLK
NC
BWE
A1
A0
V
DD
A
TCK
A
A
A
GND
GND
GND
BWb
GND
NC
GND
BWa
GND
GND
GND
NC
A
TDO
A
A
A
DQPb
DQb
DQb
DQb
DQb
V
DD
DQa
DQa
DQa
DQa
DQPa
A
NC
NC
V
DDQ
NC
NC
DQb
DQb
V
DDQ
DQb
DQb
V
DDQ
DQa
DQa
V
DDQ
DQa
DQa
NC
ZZ
V
DDQ
NC
NC
DQb
DQb
V
DDQ
DQb
DQb
V
DDQ
DQa
V
DDQ
256K x 36
PIN DESCRIPTIONS
A0, A1
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
Synchronous Address Inputs
Synchronous Clock
Synchronous Processor Address
Status
Synchronous Controller Address
Status
Synchronous Burst Address Advance
Individual Byte Write Enable
Synchronous Byte Write Enable
TMS, TDI
TCK, TDO
GW
CE,
CE2,
CE2
OE
DQa-DQd
MODE
V
DD
GND
V
DDQ
ZZ
DQPa-DQPd
JTAG Boundry Scan Pins
Synchronous Global Write Enable
Synchronous Chip Enable
Output Enable
Synchronous Data Input/Output
Burst Sequence Mode Selection
+3.3V Power Supply
Ground
Isolated Output Buffer Supply:
+3.3V or 2.5V
Snooze Enable
Parity Data I/O
5
A
CLK
ADSP
ADSC
ADV
BWa-BWd
BWE
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
04/01/03
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