RN2423(TE85L,F),RN2423(TE85L,F) pdf中文资料,RN2423(TE85L,F)引脚图,RN2423(TE85L,F)电路-Datasheet-电子工程世界

Datasheet> 器件分类 > 分立半导体> 晶体管> RN2423(TE85L,F)

RN2423(TE85L,F): 产品描述PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,800MA I(C),SC-59; 产品类别分立半导体晶体管; 文件大小554KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/; 标准

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RN2423(TE85L,F)概述

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,800MA I(C),SC-59

RN2423(TE85L,F)规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	,
Reach Compliance Code	unknown
最大集电极电流 (IC)	0.8 A
最小直流电流增益 (hFE)	70
元件数量	1
极性/信道类型	PNP
最大功率耗散 (Abs)	0.2 W
表面贴装	YES
晶体管元件材料	SILICON
Base Number Matches	1

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RN2421~RN2427

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2421,RN2422,RN2423,RN2424

RN2425,RN2426,RN2427

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

High current type (I

C(MAX)

−800mA)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Low V

CE (sat)

Complementary to RN1421~RN1427

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2421

RN2422

RN2423

RN2424

RN2425

RN2426

RN2427

R1 (kΩ)

2.2

4.7

0.47

2.2

R2 (kΩ)

2.2

4.7

JEDEC

JEITA

TOSHIBA

―

SC-59

2-3F1A

Weight: 0.012 g (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-Base voltage

Collector-Emitter voltage

RN2421~2427

RN2421~2424

Emitter-Base voltage

RN2425, 2426

RN2427

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2421~2427

stg

EBO

Symbol

CBO

CEO

Rating

−50

−10

−5

−6

−800

200

150

−55~150

°C

Unit

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

RN2423(TE85L,F)相似产品对比

	RN2423(TE85L,F)	RN2426(TE85L,F)	RN2424(TE85L,F)
描述	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,800MA I(C),SC-59	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,800MA I(C),SC-59	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,800MA I(C),SC-59
是否Rohs认证	符合	符合	符合
Reach Compliance Code	unknown	unknown	unknown
最大集电极电流 (IC)	0.8 A	0.8 A	0.8 A
最小直流电流增益 (hFE)	70	90	90
元件数量	1	1	1
极性/信道类型	PNP	PNP	PNP
最大功率耗散 (Abs)	0.2 W	0.2 W	0.2 W
表面贴装	YES	YES	YES
晶体管元件材料	SILICON	SILICON	SILICON
Base Number Matches	1	1	-

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