SMD Type
PNP Silicon AF Transistors
KC808A
(BC808A)
SOT-23
Transistors
Unit: mm
For general AF applications.
+0.1
2.4
-0.1
High collector current.
High current gain.
Low collector-emitter saturation voltage.
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
Features
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Base current
Total power dissipation
Storage temperature
Junction temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Rating
-30
-25
-5
-500
-1
-100
310
-65 to +150
150
Unit
V
V
V
mA
A
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
KC808A-16
DC current gain *
Collector saturation voltage *
Base to emitter voltage *
Collector-base capacitance
Emitter-base capacitance
Transition frequency
* Pulsed: PW
350 ìs, duty cycle
2%
KC808A-25
KC808A-40
V
CE(sat)
I
C
= -500 mA, I
B
= -50 mA
V
BE(sat)
I
C
= -500 mA, I
B
= -50 mA
C
Cb
Ceb
f
T
V
CB
= -10 V, f = 1 MHz
V
EB
= -0.5 V, f = 1 MHz
I
C
= -50 mA, V
CE
= -5 V, f = 100 MHz
10
60
200
h
FE
I
C
= -100 mA, V
CE
= -1 V
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
Testconditons
I
C
= -10 µA, I
E
= 0
I
C
= -10 mA, I
B
= 0
I
E
= -10 µA, I
C
= 0
V
CB
= -25 V, I
E
= 0
V
CB
= -25 V, I
E
= 0 , T
A
= 150
V
EB
= -4 V, I
C
= 0
100
160
250
160
250
350
Min
-30
-25
-5
-100
-50
-100
250
400
630
-0.7
-1.2
V
V
pF
pF
MHz
Typ
Max
Unit
V
V
V
nA
A
nA
Marking
NO.
Marking
KC808A-16
5E
KC808A-25
5F
KC808A-40
5G
+0.1
0.38
-0.1
0-0.1
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