SMD Type
Medium Power Transistor
FMMT591
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
Low equivalent on-resistance.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j,
T
stg
Rating
-80
-60
-5
-2
-1
-200
500
-55 to +150
Unit
V
V
V
A
A
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Symbol
V
(BR)CBO
I
C
=-100ìA
V
(BR)CEO
I
C
=-10mA
V
(BR)EBO
I
E
=-100ìA
I
CBO
I
EBO
V
CB
=-60V
V
EB
=-4V
Testconditons
Min
-80
-60
-5
-100
-100
-0.6
-1.2
-1.0
100
100
80
40
150
10
MHz
pF
300
Typ
Max
Unit
V
V
V
nA
nA
V
V
V
V
CE(
sat) I
C
=-1A,I
B
=-100mA
V
BE(
sat) I
C
=-1A,I
B
=-100mA
V
BE(ON)
I
C
=-1A,V
CE
=-5V
I
C
=-1mA, V
CE
=-2V*
Static Forward Current TransferRatio
h
FE
I
C
=-500mA,V
CE
=-5V
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Current-gain-bandwidth product
Output capacitance
* Pulse test: tp
300 ìs; d
0.02.
f
T
C
obo
I
C
=-50mA,V
CE
=-10V,f=100MHz
V
CB
=-10V,f=1MHz
Marking
Marking
591
+0.1
0.38
-0.1
0-0.1
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