SMD Type
Medium Power Transistor
FMMT549A
SOT-23
Transistors
IC
Unit: mm
Features
Low equivalent on-resistance.
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j,
T
stg
Rating
-35
-30
-5
-2
-1
-200
500
-55 to +150
Unit
V
V
V
A
A
mA
mW
0-0.1
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1
SMD Type
FMMT549A
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Symbol
V
(BR)CBO
I
C
=-100ìA
V
(BR)CEO
I
C
=-10mA
V
(BR)EBO
I
E
=-100ìA
I
CBO
I
EBO
V
CB
=-30V
V
EB
=-4V
Testconditons
Transistors
IC
Min
-35
-30
-5
Typ
Max
Unit
V
V
V
-0.1
-0.1
-0.3
-0.9
-0.85
70
80
40
150
100
25
50
300
200
130
80
200
500
-1.25
-1
ìA
ìA
V
V
V
V
CE(
sat) I
C
=-100mA,I
B
=-1A
V
BE(
sat) I
C
=-1A,I
B
=-100mA
V
BE(ON)
I
C
=-1A,V
CE
=-2V
I
C
=-50mA, V
CE
=-2V
DC current gain *
h
FE
I
C
=-1A, V
CE
=-2V
I
C
=-2A, V
CE
=-2V
I
C
=-500mA,V
CE
=-2V
Current-gain-bandwidth product
Output capacitance
Switching times
* Pulse test: tp
300 ìs; d
0.02.
f
T
C
obo
t
on
t
off
I
C
=-100mA,V
CE
=-5V,f=100MHz
V
CB
=-10V,f=1MHz
V
CB
=-10V, f=1MHz
I
C
=-500mA,V
CC
=-10V,I
B1
=I
B2
=-50mA
MHz
pF
ns
ns
Marking
Marking
59A
2
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