SMD Type
PNP Medium Frequency Transistor
BF824W
Transistors
IC
Features
Low current (max. 25 mA).
Low voltage (max. 30 V).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation *
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient *
* Transistor mounted on an FR4 printed-circuit board.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
R
amb
R
th j-a
Rating
-30
-30
-4
-25
-25
200
-65 to +150
150
-65 to +150
625
K/W
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Base to emitter voltage
Feedback capacitance
Symbol
I
CBO
I
EBO
h
FE
V
BE
C
rb
Testconditons
I
E
= 0; V
CB
= -30 V
I
E
= 0; V
CB
= -30 V; Tj = 150
I
C
= 0; V
EB
= -4 V
I
C
= -1 mA; V
CE
= -10 V
I
C
= -4 mA; V
CE
= -10 V
I
C
= -4 mA; V
CE
= -10 V
I
C
= 0; V
CE
= -10 V; f = 1 MHz
V
CE
= -10 V; f = 100 MHz;
I
C
= -1 mA
I
C
= -4 mA
I
C
= -8 mA
250
400
390
25
25
-900
0.3
mV
pF
Min
Typ
Max
-50
-10
-100
Unit
nA
ìA
nA
Transition frequency
f
T
MHz
Marking
Marking
F8
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