SMD Type
NPN Epitaxial Silicon Transistor
MJD340
TO-252
Transistors
Unit: mm
+0.1
2.30
-0.1
Features
Load Formed for Surface Mount Application
Straight Lead
+0.2
9.70
-0.2
+0.15
1.50
-0.15
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25 unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC = 25 )
Collector Dissipation (Ta = 25 )
Junction Temperature
Storage Temperature
T
J
T
STG
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
300
300
3
0.5
0.75
15
1.56
150
-65 to 150
Unit
V
V
V
A
A
A
W
W
Electrical Characteristics Ta = 25 unless otherwise noted
Parameter
Collector-Emitter Sustaining Voltage *
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain *
*Pulse Test: PW
300ìs, Duty Cycle 2%
Symbol
V
CEO(sus)
I
CEO
I
EBO
h
FE
Testconditons
I
C
= 1mA, I
B
= 0
V
CB
= 300V, I
E
=0
V
EB
= 3V, I
C
= 0
V
CE
= 10V, I
C
= 50mA
30
Min
300
0.1
0.1
240
Typ
Max
Unit
V
mA
mA
3
.8
0
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