SMD Type
Silicon Schottky Barrier Diode
HSM88ASR
Diodes
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Proof against high voltage.
MPAK package is suitable for high density surface mounting and high speed assembly.
1
2
+0.1
1.3
-0.1
Features
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
R e v e rs e v o lta g e
A v e ra g e re c tifie d c u rre n t
J u n c tio n te m p e ra tu re
S to ra g e te m p e ra tu re
S ym bol
V
R
I
O
T
j
T
s tg
V a lu e
10
15
125
-5 5 to + 1 2 5
U n it
V
mA
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Symbol
V
F
Conditions
I
F
= 1 mA
I
F
= 10 mA
Reverse current
Capacitance
Capacitance deviation
Forward voltage deviation
ESD-Capability (Note 1)
Note
1. Failure criterion ; I
R
400nA at V
R
=2 V
I
R
C
ÄC
ÄV
F
V
R
= 2 V
V
R
= 10 V
V
R
=0 V, f = 1 MHz
V
R
=0 V, f = 1 MHz
I
F
= 10 mA
C=200pF , Both forward and
reverse direction 1 pulse.
30
Min
350
500
Typ
Max
420
580
0.2
10
0.85
0.10
10
A
pF
pF
mV
V
Unit
mV
Marking
Marking
C3
0-0.1
www.kexin.com.cn
1
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
