SMD Type
Silicon Schottky Barrier Diode
HSM107S
Diodes
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Low V
F
and high efficiency.
HSM107S which is interconnected in series configuration is designed
for protection from not only external excessive voltage but also
miss-operation on electric systems.
MPAK package is suitable for high density surface mounting and high speed assembly.
+0.1
1.3
-0.1
Features
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Reverse voltage
Peak forward current
Non-Repetitive Peak forward surge current
Average rectified current
Junction temperature
Storage temperature
Note
1. Square wave, 10ms
Symbol
V
R
I
FM
I
FSM
(Note 1)
I
O
T
j
T
stg
Value
8
0.1
0.5
50
125
-55 to +125
Unit
V
A
A
mA
Electrical Characteristics Ta = 25
Parameter
Reverse voltage
Reverse current
Forward voltage
ESD-Capability (Note 1)
Note
1. Failure criterion ; I
R
60
A at V
R
=5 V
Symbol
V
R
I
R
V
F
Conditions
V
R
=1.0 mA
V
R
= 5 V
I
F
= 10 mA
C=200pF , Both forward and
reverse direction 1 pulse.
100
Min
8
30
0.3
Typ
Max
Unit
pF
A
V
V
Marking
Marking
C5
0-0.1
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