SMD Type
Silicon Schottky Barrier Diode
HRW0502A
Diodes
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Low forward voltage drop and suitable for
high effifiency rectifying.
MPAK package is suittable for high density
surface mounting and high speed assembly.
+0.1
1.3
-0.1
Features
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
A bsolute M axim um R atings T a = 25
P aram eter
R epetitive peak reverse voltage
A verage rectified current
N on-repetitive peak forw ard surge current
Junction tem perature
S torage tem perature
N ote
1. 10m sec sine w ave 1 pulse
S ym bol
V
RRM
I
O
I
F S M
(N ote 1)
T
j
T
stg
V alue
20
500
5
125
-55 to + 125
U nit
V
mA
A
Electrical Characteristics Ta = 25
Param eter
Forward voltage
Reverse current
Capacitance
Therm al resistance
Sym bol
V
F
I
R
C
R
th( j-a )
Conditions
I
F
= 500 m A
V
R
= 20 V
V
R
= 0 V, f = 1MHz
Polyim ide board
120
340
Min
Typ
Max
0.40
200
Unit
V
A
pF
/W
Marking
Marking
S10
0-0.1
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