SMD Type
Digital Transistors
HR1A3M
Transistors
Features
Up to 2A High Current Drives Such As IC Outputs and
Actuators Available
On-chip Bias Resistor
Low Power Consumption During Drive
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Total Power Dissipation
Junction temperature
Storage temperature
*1 PW
10ms, Duty Cycle 50%
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*1
I
B(DC)
P
T
*2
T
j
T
stg
Rating
-60
-60
-10
-1.0
-2.0
-0.02
2.0
150
-55 to +150
Unit
V
V
V
A
A
A
W
*2 When 0.7mm x 16cm
2
ceramic board is used.
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Symbol
I
CBO
Testconditons
V
CB
= -60V, I
E
= 0
V
CE
= -2.0V , I
C
= -0.1A
DC Current Gain
h
FE
*
V
CE
= -2.0V , I
C
= -0.5A
V
CE
= -2.0V , I
C
= -1.0A
Low Level Output Voltage
Low Level Input Voltage
Input Resistance
Emitter-Base Resistance
* PW
350 s, Duty Cycle 2%
V
OL
*
V
IL
*
R
1
R
2
V
IN
= -5.0V, I
C
= -0.4A
V
CE
= -5.0V, I
C
= -100 A
0.7
0.7
1.0
1.0
50
100
50
-0.4
-0.3
1.3
1.3
V
V
k
k
Min
Typ
Max
-100
Unit
nA
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