SMD Type
NPN Medium Power Transistor
KCP56-16
Transistors
SOT-223
Unit: mm
+0.2
3.50
-0.2
■
Features
●
For AF driver and output stages
●
High collector current
●
Low collector-emitter saturation voltage
+0.2
6.50
-0.2
0
.1max
+0.05
0.90
-0.05
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
1
2
2.9
4.6
3
+0.1
0.70
-0.1
1 base
2 collector
3 emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current (t
P
< 5ms)
power dissipation
thermal resistance from junction to ambient
junction temperature
storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
R
θJA
T
j
Tstg
Rating
100
80
5
1
1.5
1.5
94
150
-65 to +150
Unit
V
V
V
A
A
W
℃/W
℃
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Base-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Testconditons
I
C
= 0.1mA,I
E
=0
I
C
= 10mA,I
B
=0
I
C
= 10μA,I
E
=0
I
E
= 0 A; V
CB
= 30 V
I
C
= 0 A; V
EB
= 5 V
I
C
= 5 mA; V
CE
= 2 V
DC current gain
h
FE
I
C
=150 mA; V
CE
= 2 V
I
C
= 500 mA; V
CE
= 2 V
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
I
C
= 500mA; I
B
= 50 mA
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
130
25
100
25
0.5
V
MHz
250
Min
100
80
5
100
100
nA
nA
Typ
Max
Unit
+0.15
1.65
-0.15
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