SMD Type
Medium Power Transistor
FMMTL717
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
Very low equivalent on-resistance;R
CE(sat)
=160mÙ at 1.25A.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak pulse current
Base current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j,
T
stg
Rating
-12
-12
-5
-1.25
-4
-200
-500
-55 to +150
Unit
V
V
V
A
A
mA
mW
0-0.1
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1
SMD Type
FMMTL718
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base cut-off current
Emitter-base current
Symbol
V
(BR)CBO
I
C
=-100ìA
V
(BR)CEO
I
C
=-10mA*
V
(BR)EBO
I
E
=-100ìA
I
CBO
I
EBO
V
CB
=-10V
V
EB
=-4V
Testconditons
Transistors
IC
Min
-12
-12
-5
Typ
-35
-25
-8.5
Max
Unit
V
V
V
-10
-10
-24
-94
-160
-200
-40
-140
-240
-290
nA
nA
Collector-emitter saturation voltage
I
C
=-100mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-20mA*
V
CE(
sat)
I
C
=-1A, I
B
=-50mA*
I
C
=-1.25A,I
B
=-50mA
V
BE(
sat) I
C
=-1.25A, I
B
=-50mA*
V
BE(on
) I
C
=-1.25A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V
I
C
=-100mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-3A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-10V f=100MHz
V
CB
=-10V, f=1MHz
I
C
=-1A, V
CC
=-10V
I
B1
=I
B2
=-10mA
300
300
180
100
50
mV
Base-emitter saturation voltage
Base-emitter ON voltage
-970 -1100
-875
490
450
275
180
110
205
15
76
149
20
-1000
mV
mV
DC current gain
h
FE
Current-gain-bandwidth product
Output capacitance
Turn-on time
Turn-off time
* Pulse test: tp
300 ìs; d
0.02.
f
T
C
obo
t
(on)
t
(off)
MHz
pF
ns
ns
Marking
Marking
L77
2
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